中国物理B ›› 2012, Vol. 21 ›› Issue (9): 97104-097104.doi: 10.1088/1674-1056/21/9/097104
吕元杰a, 林兆军a, 于英霞a, 孟令国a, 曹芝芳a, 栾崇彪a, 王占国b
Lü Yuan-Jie(吕元杰)a, Lin Zhao-Jun (林兆军)a, Yu Ying-Xia (于英霞)a, Meng Ling-Guo (孟令国)a, Cao Zhi-Fang (曹芝芳)a, Luan Chong-Biao (栾崇彪)a, Wang Zhan-Guo (王占国)b
摘要: An Ni Schottky contact on the AlGaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the AlGaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With the measured capacitance-voltage curve and the flat-band voltage, the polarization charge density in the AlGaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger's and Poisson's equations.
中图分类号: (III-V semiconductors)