Flat-band voltage shift in metal-gate/high-k/Si stacks

doi:10.1088/1674-1056/20/9/097303

中国物理B ›› 2011, Vol. 20 ›› Issue (9): 97303-097303.doi: 10.1088/1674-1056/20/9/097303

Flat-band voltage shift in metal-gate/high-k/Si stacks

杨晓东¹, 朱剑豪², 黄安平³, 郑晓虎³, 肖志松³, 杨智超³, 王玫³

(1)Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA; (2)Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China; (3)Department of Physics, Beihang University, Beijing 100191, China

收稿日期:2011-01-28 修回日期:2011-04-19 出版日期:2011-09-15 发布日期:2011-09-15

Flat-band voltage shift in metal-gate/high-k/Si stacks

Huang An-Ping(黄安平)^a)†, Zheng Xiao-Hu(郑晓虎)^a), Xiao Zhi-Song(肖志松)^a), Yang Zhi-Chao(杨智超)^a), Wang Mei(王玫)^a), Paul K. Chu(朱剑豪)^b), and Yang Xiao-Dong(杨晓东)^c)

^a Department of Physics, Beihang University, Beijing 100191, China; ^b Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China; ^c Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA

Received:2011-01-28 Revised:2011-04-19 Online:2011-09-15 Published:2011-09-15

摘要/Abstract

摘要： In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (V_fb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (V_fb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the V_fb shift and the origin of the V_fb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the V_fb shift phenomenon are summarized and the future research trend is described.

关键词: flat-band voltage shift, V_fb roll-off, metal gate, high-k dielectrics

Abstract: In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (V_fb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (V_fb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the V_fb shift and the origin of the V_fb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the V_fb shift phenomenon are summarized and the future research trend is described.

Key words: flat-band voltage shift, V_fb roll-off, metal gate, high-k dielectrics

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

85.30.Tv (Field effect devices) 73.30.+y (Surface double layers, Schottky barriers, and work functions)

黄安平, 郑晓虎, 肖志松, 杨智超, 王玫, 朱剑豪, 杨晓东. Flat-band voltage shift in metal-gate/high-k/Si stacks[J]. 中国物理B, 2011, 20(9): 97303-097303.

Huang An-Ping(黄安平), Zheng Xiao-Hu(郑晓虎), Xiao Zhi-Song(肖志松), Yang Zhi-Chao(杨智超), Wang Mei(王玫), Paul K. Chu(朱剑豪), and Yang Xiao-Dong(杨晓东) . Flat-band voltage shift in metal-gate/high-k/Si stacks[J]. Chin. Phys. B, 2011, 20(9): 97303-097303.

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Flat-band voltage shift in metal-gate/high-k/Si stacks

Flat-band voltage shift in metal-gate/high-k/Si stacks

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