A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics

doi:10.1088/1674-1056/21/9/097104

中国物理B ›› 2012, Vol. 21 ›› Issue (9): 97104-097104.doi: 10.1088/1674-1056/21/9/097104

A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics

吕元杰^a, 林兆军^a, 于英霞^a, 孟令国^a, 曹芝芳^a, 栾崇彪^a, 王占国^b

a School of Physics, Shandong University, Jinan 250100, China;
b Laboratory of Semiconductor Materials science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2012-01-10 修回日期:2012-03-02 出版日期:2012-08-01 发布日期:2012-08-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10774090 and 11174182), the National Basic Research Program of China (Grant No. 2007CB936602), and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics

Lü Yuan-Jie(吕元杰)^a, Lin Zhao-Jun (林兆军)^a, Yu Ying-Xia (于英霞)^a, Meng Ling-Guo (孟令国)^a, Cao Zhi-Fang (曹芝芳)^a, Luan Chong-Biao (栾崇彪)^a, Wang Zhan-Guo (王占国)^b

a School of Physics, Shandong University, Jinan 250100, China;
b Laboratory of Semiconductor Materials science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2012-01-10 Revised:2012-03-02 Online:2012-08-01 Published:2012-08-01
Contact: Lin Zhao-Jun E-mail:linzj@sdu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10774090 and 11174182), the National Basic Research Program of China (Grant No. 2007CB936602), and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

摘要/Abstract

摘要： An Ni Schottky contact on the AlGaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the AlGaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With the measured capacitance-voltage curve and the flat-band voltage, the polarization charge density in the AlGaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger's and Poisson's equations.

关键词: AlGaN/GaN heterostructures, flat-band voltage, polarization charge density

Abstract: An Ni Schottky contact on the AlGaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the AlGaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With the measured capacitance-voltage curve and the flat-band voltage, the polarization charge density in the AlGaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger's and Poisson's equations.

Key words: AlGaN/GaN heterostructures, flat-band voltage, polarization charge density

中图分类号: (III-V semiconductors)

71.55.Eq

74.78.Fk (Multilayers, superlattices, heterostructures) 77.22.Ej (Polarization and depolarization)

吕元杰, 林兆军, 于英霞, 孟令国, 曹芝芳, 栾崇彪, 王占国. A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics[J]. 中国物理B, 2012, 21(9): 97104-097104.

Lü Yuan-Jie (吕元杰), Lin Zhao-Jun (林兆军), Yu Ying-Xia (于英霞), Meng Ling-Guo (孟令国), Cao Zhi-Fang (曹芝芳), Luan Chong-Biao (栾崇彪), Wang Zhan-Guo (王占国). A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics[J]. Chin. Phys. B, 2012, 21(9): 97104-097104.

参考文献 16

[1]	Palacios T, Chakraborty A, Rajan S, Poblenz C, Keller S, DenBaars S P, Speck J S and Mishra U K 2005 IEEE Electron Device Lett. 26 781
[2]	Kohn E, Daumiller I, Kunze M, Neuburger M, Seyboth M, Jenkins T J, Swell J S, Norstand J V, Smorchkova Y and Mishra U K 2003 IEEE Trans. Microwave Theory Tech. 51 634
[3]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J and Eastman L F 1999 J. Appl. Phys. 85 3222
[4]	Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A and Stutzmann M 2000 J. Appl. Phys. 87 334
[5]	Bernardini F, Fiorentini V and Vanderbilt D 2001 Phys. Rev. B 63 193201
[6]	Lin Z J, Lu W, Lee J, Liu D M, Flynn J S and Brandes G R 2003 Electron. Lett. 39 1412
[7]	Lin Z J, Zhao Z J, Corrigan T D, Wang Z, You Z D, Wang Z G and Lu W 2008 J. Appl. Phys. 103 044503
[8]	Miller E J, Yu E T, Poblenz C, Elsass C and Speck J S 2002 Appl. Phys. Lett. 80 3551
[9]	Zhao Z J, Lin Z J, Corrigan T D, Wang Z and You Z D 2007 Appl. Phys. Lett. 91 173507
[10]	Lv Y J, Lin Z J, Corrigan T D, Zhao Z J, Cao Z F, Meng L G, Luan C B, Wang Z G and Chen H 2011 J. Appl. Phys. 109 074512
[11]	Lee K Y, Lund B, Ytterdal T, Robertson P, Martinez E, Robertson J and Shur M 1996 IEEE Trans. Electron Devices 43 854
[12]	Lv Y J, Lin Z J, Meng L G, Yu Y X, Luan C B, Cao Z F, Chen H, Sun B Q and Wang Z G 2011 Appl. Phys. Lett. 99 12354
[13]	Levine J D 1971 J. Appl. Phys. 42 3991
[14]	Lin Z J, Lu W, Lee J, Liu D M, Flynn J S and Brandes G R 2003 Appl. Phys. Lett. 82 4364
[15]	Lv Y J, Lin Z J, Zhang Y, Meng L G, Cao Z F, Luan C B, Chen H and Wang Z G 2011 Chin. Phys. B 20 047105
[16]	Yu L S, Xing Q J, Qiao D, Lau S S, Boutros K S and Redwing J M 1998 Appl. Phys. Lett. 73 3917

A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics

A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics

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