中国物理B ›› 2012, Vol. 21 ›› Issue (8): 87802-087802.doi: 10.1088/1674-1056/21/8/087802

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Strain relaxation and optical properties of etched In0.19Ga0.81N nanorod arrays on the GaN template

张东炎a b, 郑新和a, 李雪飞a, 吴渊渊a b, 王辉a, 王建峰a, 杨辉a   

  1. a Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
    b Graduate University of the Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2011-12-20 修回日期:2012-02-09 出版日期:2012-07-01 发布日期:2012-07-01
  • 基金资助:
    Project supported by the SONY-SINANO Joint Project (Grant No. Y1AAQ11001), the Suzhou Solar Cell Research Project, China (Grant No. ZXJ0903), and the International S & T Cooperation Projects (SINO-Japan), the Science Fund of the Ministry of Science and Technology of the People's Republic of China (Grant No. 2010DFA22770).

Strain relaxation and optical properties of etched In0.19Ga0.81N nanorod arrays on the GaN template

Zhang Dong-Yan (张东炎)a b, Zheng Xin-He (郑新和)a, Li Xue-Fei (李雪飞)a, Wu Yuan-Yuan (吴渊渊)a b, Wang Hui (王辉)a, Wang Jian-Feng (王建峰)a, Yang Hui (杨辉)a   

  1. a Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
    b Graduate University of the Chinese Academy of Sciences, Beijing 100190, China
  • Received:2011-12-20 Revised:2012-02-09 Online:2012-07-01 Published:2012-07-01
  • Contact: Zheng Xin-He E-mail:xhzheng2009@sinano.ac.cn
  • Supported by:
    Project supported by the SONY-SINANO Joint Project (Grant No. Y1AAQ11001), the Suzhou Solar Cell Research Project, China (Grant No. ZXJ0903), and the International S & T Cooperation Projects (SINO-Japan), the Science Fund of the Ministry of Science and Technology of the People's Republic of China (Grant No. 2010DFA22770).

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摘要： InGaN/GaN epilayers, which are grown on sapphire substrates by metal-organic chemical-vapour deposition (MOCVD) method, are formed into nanorod arrays using inductively coupled plasma etching via self-assembled Ni nanomasks. The formation of nanorod arrays eliminates the tilt of the InGaN (0002) crystallographic plane with respect to its GaN bulk layer. Photoluminescence results show an apparent S-shaped dependence on temperature. The light extraction efficiency and intensity of photoluminescence emission at low temperature less than 30 K for the nanorod arrays are enhanced by the large surface area, which increases the quenching effect because of high density of surface states for the temperature above 30 K. Additionally, a red-shift for the InGaN/GaN nanorod arrays is observed due to the strain relaxation, which is confirmed by reciprocal space mapping measurements.

关键词: InGaN/GaN nanorod arrays, photoluminescence, strain relaxation, recombination

Abstract: InGaN/GaN epilayers, which are grown on sapphire substrates by metal-organic chemical-vapour deposition (MOCVD) method, are formed into nanorod arrays using inductively coupled plasma etching via self-assembled Ni nanomasks. The formation of nanorod arrays eliminates the tilt of the InGaN (0002) crystallographic plane with respect to its GaN bulk layer. Photoluminescence results show an apparent S-shaped dependence on temperature. The light extraction efficiency and intensity of photoluminescence emission at low temperature less than 30 K for the nanorod arrays are enhanced by the large surface area, which increases the quenching effect because of high density of surface states for the temperature above 30 K. Additionally, a red-shift for the InGaN/GaN nanorod arrays is observed due to the strain relaxation, which is confirmed by reciprocal space mapping measurements.

Key words: InGaN/GaN nanorod arrays, photoluminescence, strain relaxation, recombination

中图分类号:  (III-V semiconductors)

  • 78.66.Fd
78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures) 74.25.Gz (Optical properties)