中国物理B ›› 2012, Vol. 21 ›› Issue (8): 87702-087702.doi: 10.1088/1674-1056/21/8/087702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influence of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition

樊继斌, 刘红侠, 高博, 马飞, 卓青青, 郝跃   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2012-01-12 修回日期:2012-02-13 出版日期:2012-07-01 发布日期:2012-07-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 61076097) and the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083).

Influence of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition

Fan Ji-Bin (樊继斌), Liu Hong-Xia (刘红侠), Gao Bo (高博), Ma Fei (马飞), Zhuo Qing-Qing (卓青青), Hao Yue (郝跃)   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2012-01-12 Revised:2012-02-13 Online:2012-07-01 Published:2012-07-01
  • Contact: Fan Ji-Bin E-mail:jbfan@mail.xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 61076097) and the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083).

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摘要： Based on X-ray photoelectron spectroscopy (XPS), influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition (ALD) are investigated in this paper. The measured valence band offset (VBO) value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lead the VBO values of H2O-based and O3-based HfO2 to vary in different ways, which is in agreement with the varition of flat band (VFB) voltage.

关键词: HfO2, band alignment, annealing, X-ray photoelectron spectroscopy, dipoles

Abstract: Based on X-ray photoelectron spectroscopy (XPS), influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition (ALD) are investigated in this paper. The measured valence band offset (VBO) value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lead the VBO values of H2O-based and O3-based HfO2 to vary in different ways, which is in agreement with the varition of flat band (VFB) voltage.

Key words: HfO2, band alignment, annealing, X-ray photoelectron spectroscopy, dipoles

中图分类号: 

  • 77.55.D-