中国物理B ›› 2012, Vol. 21 ›› Issue (4): 47301-047301.doi: 10.1088/1674-1056/21/4/047301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

张婷,丁玲红,张伟风   

  • 收稿日期:2011-09-08 修回日期:2011-10-19 出版日期:2012-02-29 发布日期:2012-02-29
  • 通讯作者: 张伟风,wfzhang@henu.edu.cn E-mail:wfzhang@henu.edu.cn

Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

Zhang Ting(张婷), Ding Ling-Hong(丁玲红), and Zhang Wei-Feng(张伟风)†   

  1. Key Laboratory of Photovoltaic Materials of Henan Province, School of Physics and Electronics, Hènan University, Kaifeng 475004, China
  • Received:2011-09-08 Revised:2011-10-19 Online:2012-02-29 Published:2012-02-29
  • Contact: Zhang Wei-Feng,wfzhang@henu.edu.cn E-mail:wfzhang@henu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60976016), the Program for Innovative Research Team in Science and Technology in University of Henan Province (IRTSTHN), China (Grant No. 2012IRTSTHN004), and the Research Program of Henan University, China (Grant No. SBGJ090503).

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Abstract: La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field-induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3?104% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.

Key words: La0.67Ca0.33MnO3 thin films, resistance switching, impedance spectroscopy, metal-oxide interface

中图分类号:  (Electronic transport in interface structures)

  • 73.40.-c
73.40.Rw (Metal-insulator-metal structures) 73.50.Fq (High-field and nonlinear effects) 72.20.-i (Conductivity phenomena in semiconductors and insulators)