Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well

doi:10.1088/1674-1056/21/10/107305

中国物理B ›› 2012, Vol. 21 ›› Issue (10): 107305-107305.doi: 10.1088/1674-1056/21/10/107305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well

谷承艳, 刘贵鹏, 时凯, 宋亚峰, 李成明, 刘祥林, 杨少延, 朱勤生, 王占国

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China

收稿日期:2012-02-10 修回日期:2012-03-19 出版日期:2012-09-01 发布日期:2012-09-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60976008, 61006004, 61076001, and 10979507), the National Basic Research Program of China (Grant No. A000091109-05), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China

Received:2012-02-10 Revised:2012-03-19 Online:2012-09-01 Published:2012-09-01
Contact: Gu Cheng-Yan, Zhu Qin-Sheng E-mail:85020624gl@163.com; qszhu@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60976008, 61006004, 61076001, and 10979507), the National Basic Research Program of China (Grant No. A000091109-05), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

摘要/Abstract

摘要： We theoretically study the influence of spacer layer thickness fluctuation (SLTF) on the mobility of a two-dimensional electron gas (2DEG) in the modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well. The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained. The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.

关键词: spacer layer thickness fluctuation scattering, interface roughness scattering, 2DEG, mobility

Abstract: We theoretically study the influence of spacer layer thickness fluctuation (SLTF) on the mobility of a two-dimensional electron gas (2DEG) in the modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well. The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained. The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.

Key words: spacer layer thickness fluctuation scattering, interface roughness scattering, 2DEG, mobility

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.21.Fg (Quantum wells)

谷承艳, 刘贵鹏, 时凯, 宋亚峰, 李成明, 刘祥林, 杨少延, 朱勤生, 王占国. Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well[J]. 中国物理B, 2012, 21(10): 107305-107305.

Gu Cheng-Yan (谷承艳), Liu Gui-Peng (刘贵鹏), Shi Kai (时凯), Song Ya-Feng (宋亚峰), Li Cheng-Ming (李成明), Liu Xiang-Lin (刘祥林), Yang Shao-Yan (杨少延), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国). Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well[J]. Chin. Phys. B, 2012, 21(10): 107305-107305.

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Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well

Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well

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