[1] |
Wei Du(杜威), Kao Jia(贾考), Zhi-Long Shi(施志龙), and Lin-Ru Nie(聂林如). Current bifurcation, reversals and multiple mobility transitions of dipole in alternating electric fields[J]. 中国物理B, 2023, 32(2): 20505-020505. |
[2] |
Tong Liu(刘通) and Shujie Cheng(成书杰). Mobility edges generated by the non-Hermitian flatband lattice[J]. 中国物理B, 2023, 32(2): 27102-027102. |
[3] |
Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate[J]. 中国物理B, 2022, 31(6): 68501-068501. |
[4] |
Wei-Min Jiang(姜伟民), Qiang Zhao(赵强), Jing-Zhuo Ling(凌靖卓), Ting-Na Shao(邵婷娜), Zi-Tao Zhang(张子涛), Ming-Rui Liu(刘明睿), Chun-Li Yao(姚春丽), Yu-Jie Qiao(乔宇杰), Mei-Hui Chen(陈美慧), Xing-Yu Chen(陈星宇), Rui-Fen Dou(窦瑞芬), Chang-Min Xiong(熊昌民), and Jia-Cai Nie(聂家财). Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface[J]. 中国物理B, 2022, 31(6): 66801-066801. |
[5] |
Pezhman Sheykholeslami-Nasab, Mahdi Davoudi-Darareh, and Mohammad Hassan Yousefi. Modeling and numerical simulation of electrical and optical characteristics of a quantum dot light-emitting diode based on the hopping mobility model: Influence of quantum dot concentration[J]. 中国物理B, 2022, 31(6): 68504-068504. |
[6] |
Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications[J]. 中国物理B, 2022, 31(5): 58505-058505. |
[7] |
Wen-Chong Li(李文充), Ling-Xiao Zhao(赵凌霄), Hai-Jun Zhao(赵海军),Gen-Fu Chen(陈根富), and Zhi-Xiang Shi(施智祥). Maximum entropy mobility spectrum analysis for the type-I Weyl semimetal TaAs[J]. 中国物理B, 2022, 31(5): 57103-057103. |
[8] |
Xinchuang Zhang(张新创), Mei Wu(武玫), Bin Hou(侯斌), Xuerui Niu(牛雪锐), Hao Lu(芦浩), Fuchun Jia(贾富春), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment[J]. 中国物理B, 2022, 31(5): 57301-057301. |
[9] |
Tong Liu(刘通), Shujie Cheng(成书杰), Rui Zhang(张锐), Rongrong Ruan(阮榕榕), and Houxun Jiang(姜厚勋). Invariable mobility edge in a quasiperiodic lattice[J]. 中国物理B, 2022, 31(2): 27101-027101. |
[10] |
Yan He(贺言), Hua-Kai Xu(许华慨), and Gang Ouyang(欧阳钢). Interface modulated electron mobility enhancement in core-shell nanowires[J]. 中国物理B, 2022, 31(11): 110502-110502. |
[11] |
Xin Zhao(赵昕), Xuanwei Zhao(赵轩为), Liwei Lin(林黎蔚), Ding Ren(任丁), Bo Liu(刘波), and Ran Ang(昂然). Electron delocalization enhances the thermoelectric performance of misfit layer compound (Sn1-xBixS)1.2(TiS2)2[J]. 中国物理B, 2022, 31(11): 117202-117202. |
[12] |
Shujie Cheng(成书杰) and Xianlong Gao(高先龙). Majorana zero modes, unconventional real-complex transition, and mobility edges in a one-dimensional non-Hermitian quasi-periodic lattice[J]. 中国物理B, 2022, 31(1): 17401-017401. |
[13] |
Jia-Le Tang(唐家乐) and Chao Liu(刘超). Removal of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch[J]. 中国物理B, 2022, 31(1): 18101-018101. |
[14] |
Yan-Fu Wang(王彦富), Bo Wang(王博), Rui-Ze Feng(封瑞泽), Zhi-Hang Tong(童志航), Tong Liu(刘桐), Peng Ding(丁芃), Yong-Bo Su(苏永波), Jing-Tao Zhou(周静涛), Feng Yang(杨枫), Wu-Chang Ding(丁武昌), and Zhi Jin(金智). Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology[J]. 中国物理B, 2022, 31(1): 18502-018502. |
[15] |
Xiang-Ping Jiang(蒋相平), Yi Qiao(乔艺), and Jun-Peng Cao(曹俊鹏). Mobility edges and reentrant localization in one-dimensional dimerized non-Hermitian quasiperiodic lattice[J]. 中国物理B, 2021, 30(9): 97202-097202. |