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Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303. |
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Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure[J]. 中国物理B, 2023, 32(1): 17306-017306. |
[3] |
Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华). Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress[J]. 中国物理B, 2022, 31(11): 117301-117301. |
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Yinlu Gao(高寅露), Kai Cheng(程开), Xue Jiang(蒋雪), and Jijun Zhao(赵纪军). Interface engineering of transition metal dichalcogenide/GaN heterostructures: Modified broadband for photoelectronic performance[J]. 中国物理B, 2022, 31(11): 117304-117304. |
[5] |
Wen-Liang Xie(谢文良), Xian-Yi Lv(吕宪义), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Guang-Tian Zou(邹广田). Relationship between the spatial position of the seed and growth mode for single-crystal diamond grown with an enclosed-type holder[J]. 中国物理B, 2022, 31(10): 108106-108106. |
[6] |
Yi Li(李依), Dong Wei(魏东), Gaofu Guo(郭高甫), Gao Zhao(赵高), Yanan Tang(唐亚楠), and Xianqi Dai(戴宪起). Hexagonal boron phosphide and boron arsenide van der Waals heterostructure as high-efficiency solar cell[J]. 中国物理B, 2022, 31(9): 97301-097301. |
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Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique[J]. 中国物理B, 2022, 31(9): 97401-097401. |
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Yue Li(李跃), Xingpeng Liu(刘兴鹏), Tangyou Sun(孙堂友), Fabi Zhang(张法碧), Tao Fu(傅涛), Peihua Wang-yang(王阳培华), Haiou Li(李海鸥)†, and Yonghe Chen(陈永和)‡. Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs[J]. 中国物理B, 2022, 31(9): 97307-097307. |
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Ji-Yao Du(都继瑶), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), and Jin-Ping Ao(敖金平). Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor[J]. 中国物理B, 2022, 31(4): 47701-047701. |
[10] |
Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching[J]. 中国物理B, 2022, 31(2): 27301-027301. |
[11] |
Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). A 4H-SiC merged P-I-N Schottky with floating back-to-back diode[J]. 中国物理B, 2022, 31(2): 28503-028503. |
[12] |
Yue-Bo Liu(柳月波), Hong-Hui Liu(刘红辉), Jun-Yu Shen(沈俊宇), Wan-Qing Yao(姚婉青), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君). Distribution of donor states on the surfaceof AlGaN/GaN heterostructures[J]. 中国物理B, 2021, 30(12): 128102-128102. |
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Xiang-Peng Zhou(周祥鹏), Hai-Bing Qiu(邱海兵), Wen-Xian Yang(杨文献), Shu-Long Lu(陆书龙), Xue Zhang(张雪), Shan Jin(金山), Xue-Fei Li(李雪飞), Li-Feng Bian(边历峰), and Hua Qin(秦华). Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy[J]. 中国物理B, 2021, 30(12): 127301-127301. |
[14] |
Yue-Bo Liu(柳月波), Jun-Yu Shen(沈俊宇), Jie-Ying Xing(邢洁莹), Wan-Qing Yao(姚婉青), Hong-Hui Liu(刘红辉), Ya-Qiong Dai(戴雅琼), Long-Kun Yang(杨隆坤), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君). Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation[J]. 中国物理B, 2021, 30(11): 117302-117302. |
[15] |
Ruo-Han Li(李若晗), Wu-Xiong Fei(费武雄), Rui Tang(唐锐), Zhao-Xi Wu(吴照玺), Chao Duan(段超), Tao Zhang(张涛), Dan Zhu(朱丹), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure[J]. 中国物理B, 2021, 30(8): 87305-087305. |