中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37305-037305.doi: 10.1088/1674-1056/20/3/037305

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Hot carrier injection degradation under dynamic stress

郝跃1, 张月1, 曹艳荣2, 马晓华3   

  1. (1)Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China; (2)School of Electronical & Machanical Engineering, Xidian University, Xi'an 710071, China; (3)School of Technical Physics, Xidian University, Xi'an 710071, China
  • 收稿日期:2010-08-20 修回日期:2010-11-13 出版日期:2011-03-15 发布日期:2011-03-15
  • 基金资助:
    Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the grant from the Major State Basic Research Development Program of China (973 Program, No. 2011CB309606), and the Fundamental Research Funds

Hot carrier injection degradation under dynamic stress

Ma Xiao-Hua(马晓华)a)†,Cao Yan-Rong(曹艳荣)b),Hao Yue(郝跃)c),and Zhang Yue(张月)c)   

  1. a School of Technical Physics, Xidian University, Xi'an 710071, China; b School of Electronical & Machanical Engineering, Xidian University, Xi'an 710071, China; c Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • Received:2010-08-20 Revised:2010-11-13 Online:2011-03-15 Published:2011-03-15
  • Supported by:
    Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the grant from the Major State Basic Research Development Program of China (973 Program, No. 2011CB309606), and the Fundamental Research Funds for the Central Universities (Grant No. JY10000904009).

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摘要： In this paper, we have studied hot carrier injection (HCI) under alternant stress. Under different stress modes, different degradations are obtained from the experiment results. The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smallest gate injection) and C (DC stress and then stress with hole injection under Vg=0 V and Vg=1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under Vg=-1.8 V and Vd=1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.

关键词: hot carrier injection, alternate stress, recovery, degradation

Abstract: In this paper, we have studied hot carrier injection (HCI) under alternant stress. Under different stress modes, different degradations are obtained from the experiment results. The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smallest gate injection) and C (DC stress and then stress with hole injection under Vg=0 V and Vg=1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under Vg=-1.8 V and Vd=1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.

Key words: hot carrier injection, alternate stress, recovery, degradation

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
85.30.Tv (Field effect devices)