Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states

doi:10.1088/1674-1056/20/11/116803

中国物理B ›› 2011, Vol. 20 ›› Issue (11): 116803-116803.doi: 10.1088/1674-1056/20/11/116803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states

高海霞, 胡榕, 杨银堂

School of Microelectronics, Xidian University, Xi'an 710071 China

收稿日期:2011-04-13 修回日期:2011-06-30 出版日期:2011-11-15 发布日期:2011-11-15
基金资助:
Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250001).

Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states

Gao Hai-Xia(高海霞)^†, Hu Rong(胡榕), and Yang Yin-Tang(杨银堂)

School of Microelectronics, Xidian University, Xi'an 710071 China

Received:2011-04-13 Revised:2011-06-30 Online:2011-11-15 Published:2011-11-15
Supported by:
Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250001).

摘要/Abstract

摘要： We report a model of the carrier transport and the subgap density of states in a polycrystalline ZnO film for simulating a polycrystalline ZnO thin film transistor. This simple model considering the deep and the band tail states reproduces well the characteristics of polycrystalline ZnO thin film transistors. Furthermore, using the developed model, we study the effects of defect parameters on the electrical performances of the polycrystalline ZnO thin film transistors.

Abstract: We report a model of the carrier transport and the subgap density of states in a polycrystalline ZnO film for simulating a polycrystalline ZnO thin film transistor. This simple model considering the deep and the band tail states reproduces well the characteristics of polycrystalline ZnO thin film transistors. Furthermore, using the developed model, we study the effects of defect parameters on the electrical performances of the polycrystalline ZnO thin film transistors.

Key words: modeling, ZnO thin film transistor, deep state, band tail

中图分类号: (Physical properties of thin films, nonelectronic)

68.60.-p

73.50.-h (Electronic transport phenomena in thin films) 73.61.-r (Electrical properties of specific thin films)

高海霞, 胡榕, 杨银堂. Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states[J]. 中国物理B, 2011, 20(11): 116803-116803.

Gao Hai-Xia(高海霞), Hu Rong(胡榕), and Yang Yin-Tang(杨银堂) . Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states[J]. Chin. Phys. B, 2011, 20(11): 116803-116803.

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Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states

Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states

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