中国物理B ›› 2012, Vol. 21 ›› Issue (11): 115203-115203.doi: 10.1088/1674-1056/21/11/115203

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇    下一篇

Nano-scale gap filling and mechanism of deposit–etch–deposit process for phase-change material

任万春a b c, 刘波a, 宋志棠a, 向阳辉b, 王宗涛b, 张北超b, 封松林a   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    b Semiconductor Manufacturing International Corporation, Shanghai 201203, China;
    c Graduate School of the Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2012-02-29 修回日期:2012-06-11 出版日期:2012-10-01 发布日期:2012-10-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB932800), the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003, 61006087, and 61076121), and the Science and Technology Council of Shanghai, China (Grant No. 1052nm07000).

Nano-scale gap filling and mechanism of deposit–etch–deposit process for phase-change material

Ren Wan-Chun (任万春)a b c, Liu Bo (刘波)a, Song Zhi-Tang (宋志棠)a, Xiang Yang-Hui (向阳辉)b, Wang Zong-Tao (王宗涛)b, Zhang Bei-Chao (张北超)b, Feng Song-Lin (封松林 )a   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    b Semiconductor Manufacturing International Corporation, Shanghai 201203, China;
    c Graduate School of the Chinese Academy of Sciences, Beijing 100049, China
  • Received:2012-02-29 Revised:2012-06-11 Online:2012-10-01 Published:2012-10-01
  • Contact: Liu Bo E-mail:liubo@mail.sim.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB932800), the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003, 61006087, and 61076121), and the Science and Technology Council of Shanghai, China (Grant No. 1052nm07000).

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摘要： Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality, purity, and accurate composition control. However, conventional physical vapor deposition process cannot meet the gap-filling requirement with device critical dimension scaling down to 90 nm or below. In this study, we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than single-step deposition process, especially at the nano-scale critical dimension. The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed. We also find that re-deposition of phase-change material from via sidewall to via bottom by argon ion bombardment during etch step was a key ingredient for the final good gap filling. We achieve void-free gap filling of phase-change material on the 45-nm via by two-cycle deposit-etch-deposit process. We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.

关键词: deposit-etch-deposit process, single step deposit, gap filling, re-deposition

Abstract: Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality, purity, and accurate composition control. However, conventional physical vapor deposition process cannot meet the gap-filling requirement with device critical dimension scaling down to 90 nm or below. In this study, we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than single-step deposition process, especially at the nano-scale critical dimension. The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed. We also find that re-deposition of phase-change material from via sidewall to via bottom by argon ion bombardment during etch step was a key ingredient for the final good gap filling. We achieve void-free gap filling of phase-change material on the 45-nm via by two-cycle deposit-etch-deposit process. We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.

Key words: deposit-etch-deposit process, single step deposit, gap filling, re-deposition

中图分类号:  (Plasma heating by radio-frequency fields; ICR, ICP, helicons)

  • 52.50.Qt
81.65.Cf (Surface cleaning, etching, patterning) 68.60.-p (Physical properties of thin films, nonelectronic) 81.16.-c (Methods of micro- and nanofabrication and processing)