Ultra-thin a-SiNx protective overcoats for hard disks and read/write heads

doi:10.1088/1674-1056/18/4/046

中国物理B ›› 2009, Vol. 18 ›› Issue (4): 1570-1573.doi: 10.1088/1674-1056/18/4/046

Ultra-thin a-SiN_x protective overcoats for hard disks and read/write heads

徐军¹, 陆文琪¹, 邓新绿¹, 董闯¹, 丁万昱²

(1)State Key Laboratory of Material Modification by Laser, Ion and Electron Beams,Dalian University of Technology, Dalian 116024, China; (2)State Key Laboratory of Material Modification by Laser, Ion and Electron Beams,Dalian University of Technology, Dalian 116024, China;Institute of Optoelectronic Materials and Device, School of Materials Science and Engineering,Dalian Jiaotong University,

收稿日期:2008-08-09 修回日期:2008-09-14 出版日期:2009-04-20 发布日期:2009-04-20
基金资助:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant No 50390060) and the National Natural Science Foundation of China (Grant Nos 60576022 and 50572012).

Ultra-thin a-SiN_x protective overcoats for hard disks and read/write heads

Ding Wan-Yu(丁万昱)^a)b)^†, Xu Jun(徐军)^a), Lu Wen-Qi(陆文琪)^a), Deng Xin-Lu(邓新绿)^a), and Dong Chuang(董闯)^a)

^a State Key Laboratory of Material Modification by Laser, Ion and Electron Beams,Dalian University of Technology, Dalian 116024, China; ^b Institute of Optoelectronic Materials and Device, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China

Received:2008-08-09 Revised:2008-09-14 Online:2009-04-20 Published:2009-04-20
Supported by:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant No 50390060) and the National Natural Science Foundation of China (Grant Nos 60576022 and 50572012).

摘要/Abstract

摘要： This paper reports that amorphous silicon nitride (a-SiN_x) overcoats were deposited at room temperature by microwave ECR plasma enhanced unbalanced magnetron sputtering. The 2 nm a-SiN_x overcoat has better anti-corrosion properties than that of reference a-CN_x overcoats (2--4.5 nm). The superior anti-corrosion performance is attributed to its stoichiometric bond structure, where 94.8% Si atoms form Si--N asymmetric stretching vibration bonds. The N/Si ratio is 1.33 as in the stoichiometry of Si₃N₄ and corresponds to the highest hardness of 25.0 GPa. The surface is atomically smooth with RMS <0.2 nm. The ultra-thin a-SiN_x overcoats are promising for hard disks and read/write heads protective coatings.

关键词: hard disk overcoat, ultra-thin, a-SiN_{x}, plasma enhanced magnetron sputtering

Abstract: This paper reports that amorphous silicon nitride ($a$-SiN$_{x})$ overcoats were deposited at room temperature by microwave ECR plasma enhanced unbalanced magnetron sputtering. The 2 nm $a$-SiN$_{x}$ overcoat has better anti-corrosion properties than that of reference $a$-CN$_{x}$ overcoats (2--4.5 nm). The superior anti-corrosion performance is attributed to its stoichiometric bond structure, where 94.8% Si atoms form Si--N asymmetric stretching vibration bonds. The N/Si ratio is 1.33 as in the stoichiometry of Si$_{3}$N$_{4}$ and corresponds to the highest hardness of 25.0 GPa. The surface is atomically smooth with RMS $<0.2$ nm. The ultra-thin $a$-SiN$_{x}$ overcoats are promising for hard disks and read/write heads protective coatings.

Key words: hard disk overcoat, ultra-thin, a-SiN_x, plasma enhanced magnetron sputtering

中图分类号: (Deposition by sputtering)

81.15.Cd

68.60.-p (Physical properties of thin films, nonelectronic) 81.65.Kn (Corrosion protection) 68.55.-a (Thin film structure and morphology) 52.77.Dq (Plasma-based ion implantation and deposition)

丁万昱, 徐军, 陆文琪, 邓新绿, 董闯. Ultra-thin a-SiN_x protective overcoats for hard disks and read/write heads[J]. 中国物理B, 2009, 18(4): 1570-1573.

Ding Wan-Yu(丁万昱), Xu Jun(徐军), Lu Wen-Qi(陆文琪), Deng Xin-Lu(邓新绿), and Dong Chuang(董闯). Ultra-thin a-SiN_x protective overcoats for hard disks and read/write heads[J]. Chin. Phys. B, 2009, 18(4): 1570-1573.

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Ultra-thin a-SiN_x protective overcoats for hard disks and read/write heads

Ultra-thin a-SiN_x protective overcoats for hard disks and read/write heads

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