中国物理B ›› 2010, Vol. 19 ›› Issue (6): 68101-068101.doi: 10.1088/1674-1056/19/6/068101

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Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching

何安和, 章勇, 朱学绘, 陈献文, 范广涵, 何苗   

  1. Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2009-09-28 出版日期:2010-06-15 发布日期:2010-06-15
  • 基金资助:
    Project supported by the Production and Research Program of Guangdong Province and Ministry of Education (Grant No.~2009B090300338), Guangdong Natural Science Foundation of China (Grant No.~8251063101000007), Guangdong Science and Technology Plan of China

Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching

He An-He(何安和), Zhang Yong(章勇), Zhu Xue-Hui(朱学绘), Chen Xian-Wen(陈献文), Fan Guang-Han(范广涵), and He Miao(何苗)†   

  1. Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • Received:2009-09-28 Online:2010-06-15 Published:2010-06-15
  • Supported by:
    Project supported by the Production and Research Program of Guangdong Province and Ministry of Education (Grant No.~2009B090300338), Guangdong Natural Science Foundation of China (Grant No.~8251063101000007), Guangdong Science and Technology Plan of China

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摘要： GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma (ICP) etching technology using a monolayer of nickel (Ni) nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34{\%} compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.

Abstract: GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma (ICP) etching technology using a monolayer of nickel (Ni) nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.

Key words: GaN-based light-emitting diodes, nickel nanoparticle, extraction efficiency, surface roughening

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
81.65.Cf (Surface cleaning, etching, patterning) 68.55.-a (Thin film structure and morphology) 68.35.B- (Structure of clean surfaces (and surface reconstruction)) 61.46.Df (Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)) 72.40.+w (Photoconduction and photovoltaic effects)