中国物理B ›› 2009, Vol. 18 ›› Issue (4): 1627-1630.doi: 10.1088/1674-1056/18/4/057

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Numerical model of multilayer organic light-emitting devices

胡玥, 饶海波   

  1. School of Optoelectronic Information, University of Electronic Scienceand Technology of China (UESTC), Chengdu 610054, China
  • 收稿日期:2008-09-01 修回日期:2008-11-28 出版日期:2009-04-20 发布日期:2009-04-20
  • 基金资助:
    Project supported by Zhejiang Yangguang Cooperation Foundation, China (Grant No W050317).

Numerical model of multilayer organic light-emitting devices

Hu Yue(胡玥) and Rao Hai-Bo(饶海波)†   

  1. School of Optoelectronic Information, University of Electronic Scienceand Technology of China (UESTC), Chengdu 610054, China
  • Received:2008-09-01 Revised:2008-11-28 Online:2009-04-20 Published:2009-04-20
  • Supported by:
    Project supported by Zhejiang Yangguang Cooperation Foundation, China (Grant No W050317).

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摘要： A numerical model of multilayer organic light-emitting devices is presented in this article. This model is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trapping, heterojunction interface and recombination process. The device structure in the simulation is ITO/CuPc (20 nm)/NPD (40 nm)/Alq3 (60 nm)/LiF/Al. There are two heterojunctions which should be dealt with in the simulation. The I--V characteristics, carrier distribution and recombination rate of a device are calculated. The simulation results and measured data are in good agreement.

Abstract: A numerical model of multilayer organic light-emitting devices is presented in this article. This model is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trapping, heterojunction interface and recombination process. The device structure in the simulation is ITO/CuPc (20 nm)/NPD (40 nm)/Alq3 (60 nm)/LiF/Al. There are two heterojunctions which should be dealt with in the simulation. The I--V characteristics, carrier distribution and recombination rate of a device are calculated. The simulation results and measured data are in good agreement.

Key words: organic light-emitting devices, multilayer, simulation

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
73.63.-b (Electronic transport in nanoscale materials and structures) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))