中国物理B ›› 2009, Vol. 18 ›› Issue (3): 1237-1241.doi: 10.1088/1674-1056/18/3/066

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Solution-based metal induced crystallization of a-Si

吴春亚1, 李学冬1, 赵淑云1, 李娟1, 孟志国1, 熊绍珍1, 张芳2   

  1. (1)Institute of Photo-Electronics, Nankai University, Tianjin 300071, China;The Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology, Tianjin 300071, China;Key Laboratory of Opto-electronic Information Science and Technology (Nankai; (2)National High Technology Research and Development Center, the Ministry of Science and Technology, Beijing 100044, China
  • 收稿日期:2008-06-27 修回日期:2008-09-05 出版日期:2009-03-20 发布日期:2009-03-20
  • 基金资助:
    Project supported by Key Project of National Natural Science Foundation of China (Grant No 60437030), ``863'' Project of National Ministry of Science and Technology of China (Grant No 2004AA33570), and Tianjin Natural Science Foundation of China (Grant No

Solution-based metal induced crystallization of a-Si

Wu Chun-Ya(吴春亚)a)b)c), Li Xue-Dong(李学冬)a)b)c), Zhao Shu-Yun(赵淑云)a)b)c), Li Juan(李娟)a)b)c), Meng Zhi-Guo(孟志国)a)b)c), Xiong Shao-Zhen(熊绍珍)a)b)c), and Zhang Fang(张芳)d)   

  1. a Institute of Photo-Electronics, Nankai University, Tianjin 300071, China; b The Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology, Tianjin 300071, China; c Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), the Ministry of Education, Tianjin 300071, China; d National High Technology Research and Development Center, the Ministry of Science and Technology, Beijing 100044, China
  • Received:2008-06-27 Revised:2008-09-05 Online:2009-03-20 Published:2009-03-20
  • Supported by:
    Project supported by Key Project of National Natural Science Foundation of China (Grant No 60437030), ``863'' Project of National Ministry of Science and Technology of China (Grant No 2004AA33570), and Tianjin Natural Science Foundation of China (Grant No

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摘要： This paper investigates a simplified metal induced crystallization (MIC) of a-Si, named solution-based MIC (S-MIC). The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol. a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6cm2/(V.s). By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.

关键词: Ni-salt source, metal induced crystallization (MIC), poly-Si, TFT

Abstract: This paper investigates a simplified metal induced crystallization (MIC) of a-Si, named solution-based MIC (S-MIC). The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol. a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6cm2/(V$\cdot$s). By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.

Key words: Ni-salt source, metal induced crystallization (MIC), poly-Si, TFT

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 73.50.Jt (Galvanomagnetic and other magnetotransport effects) 73.61.Cw (Elemental semiconductors) 85.30.Tv (Field effect devices)