中国物理B ›› 2013, Vol. 22 ›› Issue (10): 105101-105101.doi: 10.1088/1674-1056/22/10/105101

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇    下一篇

The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

李娟a, 罗翀a, 孟志国a, 熊绍珍a, 郭海威b   

  1. a Institute of Photo-Electronics, Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China;
    b Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
  • 收稿日期:2012-12-10 修回日期:2013-04-14 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076006) and the Flat-Panel Display Special Project of China’s 863 Plan (Grant No. 2008AA03A335).

The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

Li Juan (李娟)a, Luo Chong (罗翀)a, Meng Zhi-Guo (孟志国)a, Xiong Shao-Zhen (熊绍珍)a, Hoi Sing Kwok (郭海威)b   

  1. a Institute of Photo-Electronics, Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China;
    b Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
  • Received:2012-12-10 Revised:2013-04-14 Online:2013-08-30 Published:2013-08-30
  • Contact: Li Juan E-mail:lj1018@nankai.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076006) and the Flat-Panel Display Special Project of China’s 863 Plan (Grant No. 2008AA03A335).

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摘要： The mechanism of hydrogen plasma passivation for poly-crystalline silicon (poly-Si) thin films is investigated by optical emission spectroscopy (OES) combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in poly-Si. The Hα with lower energy is mainly responsible for passivating the solid phase crystallization (SPC) poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition (PECVD). The H* with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively. In addition, Hβ and Hγ with the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited by low pressure chemical vapor deposition (LPCVD).

关键词: hydrogen plasma, passivation, poly-Si, mechanism

Abstract: The mechanism of hydrogen plasma passivation for poly-crystalline silicon (poly-Si) thin films is investigated by optical emission spectroscopy (OES) combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in poly-Si. The Hα with lower energy is mainly responsible for passivating the solid phase crystallization (SPC) poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition (PECVD). The H* with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively. In addition, Hβ and Hγ with the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited by low pressure chemical vapor deposition (LPCVD).

Key words: hydrogen plasma, passivation, poly-Si, mechanism

中图分类号:  (Electrical properties)

  • 51.50.+v
52.25.-b (Plasma properties) 61.82.Fk (Semiconductors)