中国物理B ›› 2009, Vol. 18 ›› Issue (3): 1231-1236.doi: 10.1088/1674-1056/18/3/065

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An oxide filled extended trench gate super junction MOSFET structure

孙军1, 王彩琳2   

  1. (1)Department of Electronics Engineering, Xi'an University of Technology, Xi'an 710048, Chin;Technologies Corporation, CSMC, Wuxi 214061, China; (2)Department of Electronics Engineering, Xi'an University of Technology, Xi'an 710048, China
  • 收稿日期:2008-09-19 修回日期:2008-10-09 出版日期:2009-03-20 发布日期:2009-03-20
  • 基金资助:
    Project supported by the Doctor Scientific Research Start-up Foundation of Xi'an University of Technology of China.

An oxide filled extended trench gate super junction MOSFET structure

Wang Cai-Lin(王彩琳)a)† and Sun Jun(孙军)a)b)   

  1. a Department of Electronics Engineering, Xi'an University of Technology, Xi'an 710048, China; b Technologies Corporation, CSMC, Wuxi 214061, China
  • Received:2008-09-19 Revised:2008-10-09 Online:2009-03-20 Published:2009-03-20
  • Supported by:
    Project supported by the Doctor Scientific Research Start-up Foundation of Xi'an University of Technology of China.

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摘要： This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.

关键词: power MOSFET, super junction, trench gate, shallow angle implantation

Abstract: This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.

Key words: power MOSFET, super junction, trench gate, shallow angle implantation

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)