中国物理B ›› 2008, Vol. 17 ›› Issue (1): 290-295.doi: 10.1088/1674-1056/17/1/051

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Calculations of two dimensional electron gas distributions in AlGaN/GaN material system

郭宝增1, 宫娜1, 于富强2   

  1. (1)College of Electronic and Informational Engineering, Hebei University, Baoding 071002, China; (2)College of Physics, Hebei Normal University, Shijiazhuang 050016, China
  • 出版日期:2008-01-20 发布日期:2008-01-20
  • 基金资助:
    Project supported by the Foundation of Hebei Education Department, China (Grant No 2003130).

Calculations of two dimensional electron gas distributions in AlGaN/GaN material system

Guo Bao-Zeng(郭宝增)a)†, Gong Na(宫娜)a), and Yu Fu-Qiang(于富强)b)   

  1. a College of Electronic and Informational Engineering, Hebei University, Baoding 071002, China; b College of Physics, Hebei Normal University, Shijiazhuang 050016, China
  • Online:2008-01-20 Published:2008-01-20
  • Supported by:
    Project supported by the Foundation of Hebei Education Department, China (Grant No 2003130).

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摘要： This paper presents calculating results of the two-dimensional electron gas (2DEG) distributions in AlGaN/GaN material system by solving the Schr\"{o}dinger and Poisson equations self-consistently. Due to high 2DEG density in the AlGaN/GaN heterojunction interface, the exchange correlation potential should be considered among the potential energy item of Schr\"{o}dinger equation. Analysis of the exchange correlation potential is given. The dependencies of the conduction band edge, 2DEG density on the Al mole fraction are presented. The polarization fields have strong influence on 2DEG density in the AlGaN/GaN heterojunction, so the dependency of the conduction band edge on the polarization is also given.

关键词: GaN, heterojunction, exchange--correlation potential, two-dimensional electron gas

Abstract: This paper presents calculating results of the two-dimensional electron gas (2DEG) distributions in AlGaN/GaN material system by solving the Schrödinger and Poisson equations self-consistently. Due to high 2DEG density in the AlGaN/GaN heterojunction interface, the exchange correlation potential should be considered among the potential energy item of Schrödinger equation. Analysis of the exchange correlation potential is given. The dependencies of the conduction band edge, 2DEG density on the Al mole fraction are presented. The polarization fields have strong influence on 2DEG density in the AlGaN/GaN heterojunction, so the dependency of the conduction band edge on the polarization is also given.

Key words: GaN, heterojunction, exchange--correlation potential, two-dimensional electron gas

中图分类号:  (Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)

  • 73.21.-b
71.45.Gm (Exchange, correlation, dielectric and magnetic response functions, plasmons) 73.20.At (Surface states, band structure, electron density of states)