中国物理B ›› 2007, Vol. 16 ›› Issue (6): 1757-1763.doi: 10.1088/1009-1963/16/6/047

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A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect

黎沛涛1, 季峰2, 徐静平2   

  1. (1)Department of Electrical & Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China; (2)Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China
  • 收稿日期:2006-11-06 修回日期:2007-01-08 出版日期:2007-06-20 发布日期:2007-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60376019).

A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect

Ji Feng (季峰)a), Xu Jing-Ping(徐静平)a)†, and Lai Pui-To (黎沛涛)b)   

  1. a Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China; b Department of Electrical & Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China
  • Received:2006-11-06 Revised:2007-01-08 Online:2007-06-20 Published:2007-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60376019).

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摘要： In this paper, a threshold voltage model for high-$k$ gate-dielectric metal--oxide--semiconductor field-effect transistors (MOSFETs) is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-$k$ gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-$k$ gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.

关键词: Threshold voltage, MOSFET, conformal mapping, fringing field

Abstract: In this paper, a threshold voltage model for high-$k$ gate-dielectric metal--oxide--semiconductor field-effect transistors (MOSFETs) is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-$k$ gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-$k$ gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.

Key words: Threshold voltage, MOSFET, conformal mapping, fringing field

中图分类号:  (Field effect devices)

  • 85.30.Tv
77.22.Ch (Permittivity (dielectric function))