中国物理B ›› 2007, Vol. 16 ›› Issue (4): 1135-1139.doi: 10.1088/1009-1963/16/4/046

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High power and high reliability GaN/InGaN flip-chip light-emitting diodes

张剑铭, 邹德恕, 徐晨, 朱彦旭, 梁庭, 达小丽, 沈光地   

  1. Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • 收稿日期:2006-08-03 修回日期:2006-11-20 出版日期:2007-04-20 发布日期:2007-04-20
  • 基金资助:
    Project supported by the Beijing Committee of Science and Technology, China (Grant No D0404003040221) and by the Talent Promoting Education, Beijing, China (Grant No 05002015200504).

High power and high reliability GaN/InGaN flip-chip light-emitting diodes

Zhang Jian-Ming(张剑铭)†, Zou De-Shu(邹德恕), Xu Chen(徐晨), Zhu Yan-Xu(朱彦旭), Liang Ting(梁庭), Da Xiao-Li(达小丽), and Shen Guang-Di(沈光地)   

  1. Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • Received:2006-08-03 Revised:2006-11-20 Online:2007-04-20 Published:2007-04-20
  • Supported by:
    Project supported by the Beijing Committee of Science and Technology, China (Grant No D0404003040221) and by the Talent Promoting Education, Beijing, China (Grant No 05002015200504).

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摘要： High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes (FCLEDs) have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge (ESD) damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard (human body model), the FCLEDs tolerated at least 10\,kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3\,V is 144.68\,mW, and 236.59\,mW at 1.0\,A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0\,A without significant power degradation or failure. The life test of FCLEDs is performed at forward current of 200\,mA at room temperature. The degradation of the light output power is no more than 9\% after 1010.75\,h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.

关键词: GaN, light emitting diode, flip-chip, high power

Abstract: High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes (FCLEDs) have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge (ESD) damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard (human body model), the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0 A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0 A without significant power degradation or failure. The life test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.

Key words: GaN, light emitting diode, flip-chip, high power

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
41.20.Cv (Electrostatics; Poisson and Laplace equations, boundary-value problems) 73.61.Ey (III-V semiconductors)