中国物理B ›› 2006, Vol. 15 ›› Issue (1): 177-181.doi: 10.1088/1009-1963/15/1/028

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

杜刚, 刘晓彦, 韩汝琦   

  1. Department of Microelectronic, Peking University,Beijing 100871, China
  • 收稿日期:2005-07-04 修回日期:2005-09-28 出版日期:2006-01-20 发布日期:2006-01-20
  • 基金资助:
    Project supported by the SpecialFoundation for State Major Basic Research Program of China (Grant NoG2000035602) and the\linebreak\makebox[1.6mm]{}National Natural Science Foundation of China (GrantNo 90307006).

Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

Du Gang (杜刚), Liu Xiao-Yan (刘晓彦), Han Ru-Qi (韩汝琦)   

  1. Department of Microelectronic, Peking University,Beijing 100871, China
  • Received:2005-07-04 Revised:2005-09-28 Online:2006-01-20 Published:2006-01-20
  • Supported by:
    Project supported by the SpecialFoundation for State Major Basic Research Program of China (Grant NoG2000035602) and the\linebreak\makebox[1.6mm]{}National Natural Science Foundation of China (GrantNo 90307006).

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摘要： A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.

Abstract: A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.

Key words: quantum mechanical effect, Monte Carlo method, semiconductor device, carrier transport

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices) 02.70.Ss (Quantum Monte Carlo methods)