中国物理B ›› 2004, Vol. 13 ›› Issue (8): 1330-1333.doi: 10.1088/1009-1963/13/8/026

• • 上一篇    下一篇

Preparation of transparent conductive ZnO:Tb films and their photoluminescence properties

方泽波, 谭永胜, 刘雪芹, 杨映虎, 王印月   

  1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
  • 收稿日期:2003-09-26 修回日期:2004-01-16 出版日期:2004-06-21 发布日期:2005-06-30
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50272027) and the Natural Science Foundation of Gansu Province, China (Grant No ZS011-050-C).

Preparation of transparent conductive ZnO:Tb films and their photoluminescence properties

Fang Ze-Bo (方泽波), Tan Yong-Sheng (谭永胜), Liu Xue-Qin (刘雪芹), Yang Ying-Hu (杨映虎), Wang Yin-Yue (王印月)   

  1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
  • Received:2003-09-26 Revised:2004-01-16 Online:2004-06-21 Published:2005-06-30
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50272027) and the Natural Science Foundation of Gansu Province, China (Grant No ZS011-050-C).

PDF (PC)

579

赞

摘要： Tb-doped Zinc oxide (ZnO:Tb) films were prepared by RF reactive magnetron sputtering of a Zn target with some Tb-chips attached. The results show that the appropriate Tb ions incorporated into ZnO films can improve the structural and electrical properties of ZnO films. Photoluminescence (PL) measurements show that the characteristic emission lines correspond to the intra-4f^n-shell transitions in Tb^{3+} ions at room temperature. Under the optimal conditions, the ZnO:Tb films were prepared with the lowest resistivity (ρ) of 9.34×10^{ -4}Ωcm, transmittance over 80% at the visible region and the strong blue emission.

关键词: ZnO films, photoluminescence, RF reactive sputtering

Abstract:

Tb-doped Zinc oxide (ZnO:Tb) films were prepared by RF reactive magnetron sputtering of a Zn target with some Tb-chips attached. The results show that the appropriate Tb ions incorporated into ZnO films can improve the structural and electrical properties of ZnO films. Photoluminescence (PL) measurements show that the characteristic emission lines correspond to the intra-4f$^n$-shell transitions in Tb$^{3+}$ ions at room temperature. Under the optimal conditions, the ZnO:Tb films were prepared with the lowest resistivity ($\rho$) of $9.34\times10^{ -4}$$\Omega$cm, transmittance over 80% at the visible region and the strong blue emission.

Key words: ZnO films, photoluminescence, RF reactive sputtering

中图分类号:  (II-VI semiconductors)

  • 78.55.Et
81.15.Cd (Deposition by sputtering) 73.50.Jt (Galvanomagnetic and other magnetotransport effects) 79.20.Rf (Atomic, molecular, and ion beam impact and interactions with surfaces) 78.66.Hf (II-VI semiconductors) 73.61.Ga (II-VI semiconductors)