中国物理B ›› 1995, Vol. 4 ›› Issue (8): 601-605.doi: 10.1088/1004-423X/4/8/005

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PERFORMANCE OF A COMPACT ECR SOURCE FOR MBE EQUIPMENT

季天仁1, 蒙林1, 刘华1, 姚鑫兹2, 黄运衡3   

  1. (1)High Energy Electronics Research Institute, University of Electronics Science and Technology of China, Chengdu 610054 , Ghina; (2)Institute of Physics, Academia Sinica, Beijing 100083, China; (3)Institute of Semiconductors, Academia Sinica, Beijing 100083, China
  • 收稿日期:1995-01-23 出版日期:1995-08-20 发布日期:1995-08-20

PERFORMANCE OF A COMPACT ECR SOURCE FOR MBE EQUIPMENT

YAO XIN-ZI (姚鑫兹)a, HUANG YUN-HENG (黄运衡)b, JI TIAN-REN (季天仁)c, MENG LIN (蒙林)c, LIU HUA (刘华)c   

  1. a Institute of Physics, Academia Sinica, Beijing 100080, China ; b Institute of Semiconductors, Academia Sinica, Beijing 100083, China; c High Energy Electronics Research Institute, University of Electronics Science and Technology of China, Chengdu 610054 , China
  • Received:1995-01-23 Online:1995-08-20 Published:1995-08-20

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摘要： A compact electron cyclotron resonance plasma source has been developed for molecular beaut epitaxy equipment. Faraday cup and Langmuir probe were used to measure the ion current densities, electron temperatures, ion densities, and plasma potentials. The ion current densities as function of pressure and microwave power have been studied.

Abstract: A compact electron cyclotron resonance plasma source has been developed for molecular beaut epitaxy equipment. Faraday cup and Langmuir probe were used to measure the ion current densities, electron temperatures, ion densities, and plasma potentials. The ion current densities as function of pressure and microwave power have been studied.

中图分类号:  (Plasma sources)

  • 52.50.Dg
52.70.Ds (Electric and magnetic measurements) 52.77.Dq (Plasma-based ion implantation and deposition) 52.25.Fi (Transport properties)