中国物理B ›› 1994, Vol. 3 ›› Issue (6): 426-430.doi: 10.1088/1004-423X/3/6/004
刘学东, 卢柯, 丁炳哲, 胡壮麒, 王永忠
LIU XUE-DONG (刘学东), LU KE (卢柯), DING BING-ZHE (丁炳哲), HU ZHUANG-QI (胡壮麒), WANG YONG-ZHONG (王永忠)
摘要: We have studied the room temperature and low-temperature electrical resistivities of nanocrystalline Fe-Cu-Si-B alloys with various grain sizes prepared by crystallization of amor-phous material. Experimental results showed that with the reduction of grain size both room temperature resistivity ρRT and residual reaistivity ρ0 of the nanostructured alloys studied increased significantly. Based on the scattering effects from interfaces and lattice distortion, the above results were qualitatively discussed.
中图分类号: (Nanocrystalline materials)