›› 2014, Vol. 23 ›› Issue (8): 87307-087307.doi: 10.1088/1674-1056/23/8/087307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction

李勇a b, 王伶俐a, 王小波a, 闫玲玲a, 苏丽霞a, 田永涛a, 李新建a   

  1. a Department of Physics and Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052, China;
    b Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000, China
  • 收稿日期:2014-01-13 修回日期:2014-04-21 出版日期:2014-08-15 发布日期:2014-08-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61176044 and 11074224), the Science and Technology Project for Innovative Scientist of Henan Province, China (Grant No. 1142002510017), and the Science and Technology Project on Key Problems of Henan Province, China (Grant No. 082101510007).

Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction

Li Yong (李勇)a b, Wang Ling-Li (王伶俐)a, Wang Xiao-Bo (王小波)a, Yan Ling-Ling (闫玲玲)a, Su Li-Xia (苏丽霞)a, Tian Yong-Tao (田永涛)a, Li Xin-Jian (李新建)a   

  1. a Department of Physics and Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052, China;
    b Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000, China
  • Received:2014-01-13 Revised:2014-04-21 Online:2014-08-15 Published:2014-08-15
  • Contact: Li Xin-Jian E-mail:lixj@zzu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61176044 and 11074224), the Science and Technology Project for Innovative Scientist of Henan Province, China (Grant No. 1142002510017), and the Science and Technology Project on Key Problems of Henan Province, China (Grant No. 082101510007).

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摘要： The electron transport behavior across the interface plays an important role in determining the performance of optoelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of interfacial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.

关键词: heterojunction, multi-interface nanoheterojunction, electron transport, silicon nanoporous pillar array (Si-NPA), CdS/Si-NPA

Abstract: The electron transport behavior across the interface plays an important role in determining the performance of optoelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of interfacial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.

Key words: heterojunction, multi-interface nanoheterojunction, electron transport, silicon nanoporous pillar array (Si-NPA), CdS/Si-NPA

中图分类号:  (Electronic transport in nanoscale materials and structures)

  • 73.63.-b
81.07.-b (Nanoscale materials and structures: fabrication and characterization) 73.63.Bd (Nanocrystalline materials) 73.63.Rt (Nanoscale contacts)