中国物理B ›› 2026, Vol. 35 ›› Issue (4): 48503-048503.doi: 10.1088/1674-1056/ae0018
Photo-response enhancement in longitudinal porous GaN-based UV
Jing Li(李京)1,2, Shaolong Shi(师少龙)1, Yutong Chen(陈昱潼)4, Zhanhong Ma(马占红)5, Xia Li(李霞)1, Yang Liu(刘洋)1,2, and Tiangui Hu(胡天贵)1,2,3,†
- 1 Yangtze Delta Region Institute (Quzhou), University of Electronic Science and Technology of China, Quzhou 324003, China;
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
3 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 Deepcreatic Technologies Ltd., Chengdu 610000, China;
5 School of Electronic and Electrical Engineering, Ningxia University, Yinchuan 750021, China
Photo-response enhancement in longitudinal porous GaN-based UV
Jing Li(李京)1,2, Shaolong Shi(师少龙)1, Yutong Chen(陈昱潼)4, Zhanhong Ma(马占红)5, Xia Li(李霞)1, Yang Liu(刘洋)1,2, and Tiangui Hu(胡天贵)1,2,3,†
- 1 Yangtze Delta Region Institute (Quzhou), University of Electronic Science and Technology of China, Quzhou 324003, China;
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
3 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 Deepcreatic Technologies Ltd., Chengdu 610000, China;
5 School of Electronic and Electrical Engineering, Ningxia University, Yinchuan 750021, China
摘要： Gallium nitride (GaN), as a typical wide bandgap semiconductor, is an excellent candidate to fabricate the high-performance UV photodetector, due to its excellent intrinsic nature. However, the weak light absorption of conventional bulk GaN limits the further improvement of photo-response of GaN-based photodetectors. Here, we have prepared a longitudinal porous GaN using a simple electrochemical etching process, and then fabricated a porous GaN-based photodetector (Porous PD). The photo-response in the Porous PD has been improved significantly compared to the control planar GaN-based photodetector (Planar PD). At $-1.2 $ V, the photo current ($I_{\rm photo}$) in the Porous PD is $\sim 75$ times higher than that of Planar PD, and the maximum responsivity of the Porous PD can reach $3.11\times10^{4}$ A/W, which is attributed to the large internal gain ($>1.06\times10^{5}$). The maximum specific detectivity of the Porous PD has also been calculated to be $5.22\times10^{13}$ Jones, two orders of magnitude higher than that of the Planar PD. Our work paves the way to develop high-performance GaN-based PDs for detecting weak optical signals.
中图分类号: (Optoelectronic devices)
- 85.60.-q