中国物理B ›› 2026, Vol. 35 ›› Issue (4): 48504-048504.doi: 10.1088/1674-1056/ae0b3d

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Enhancement of rectification by quantum interference in co-oligomer molecular diodes

Han-Shuang Zhang(张含双), Han Ma(马晗), Hui-Qing Zhang(张惠晴), Xiao-Bei Zhang(张晓蓓), Jun-Feng Ren(任俊峰), Guang-Ping Zhang(张广平)†, and Gui-Chao Hu(胡贵超)‡   

  1. School of Physics and Electronics, Shandong Normal University, Jinan 250358, China
  • 收稿日期:2025-08-05 修回日期:2025-09-13 接受日期:2025-09-25 发布日期:2026-04-07
  • 通讯作者: Guang-Ping Zhang, Gui-Chao Hu E-mail:zhangguangping@sdnu.edu.cn;hgc@sdnu.edu.cn
  • 基金资助:
    Project supported by the Shandong Provincial Natural Science Foundation (Grant No. ZR2025MS09), the National Natural Science Foundation of China (Grant Nos. 12474212 and 12274264), and the China Scholar Council.

Enhancement of rectification by quantum interference in co-oligomer molecular diodes

Han-Shuang Zhang(张含双), Han Ma(马晗), Hui-Qing Zhang(张惠晴), Xiao-Bei Zhang(张晓蓓), Jun-Feng Ren(任俊峰), Guang-Ping Zhang(张广平)†, and Gui-Chao Hu(胡贵超)‡   

  1. School of Physics and Electronics, Shandong Normal University, Jinan 250358, China
  • Received:2025-08-05 Revised:2025-09-13 Accepted:2025-09-25 Published:2026-04-07
  • Contact: Guang-Ping Zhang, Gui-Chao Hu E-mail:zhangguangping@sdnu.edu.cn;hgc@sdnu.edu.cn
  • Supported by:
    Project supported by the Shandong Provincial Natural Science Foundation (Grant No. ZR2025MS09), the National Natural Science Foundation of China (Grant Nos. 12474212 and 12274264), and the China Scholar Council.

摘要: We investigate the rectification property theoretically in co-oligomer diodes integrating a destructive quantum interference (DQI) feature. The results demonstrate that compared to a similar co-oligomer diode without DQI, the rectification ratio is enhanced by one order of magnitude in the presence of the DQI feature. Mechanism analysis indicates that the high rectification ratio benefits from the strong suppression of transmission in the off-state of the diode by the DQI dip. The strong rectification is attributed to the distinctly asymmetric shift of the DQI dip under bias voltages, which comes out as a result of both bias-induced shift of eigenvalues and redistribution of wave functions of all orbitals. The effect of energy level alignment between the two segments of the co-oligomer on the rectification is also discussed. This work provides a valid way to enhance the performance of intrinsic co-oligomer diodes, a promising approach for molecular circuit design.

关键词: quantum interference, molecular rectification, co-oligomer

Abstract: We investigate the rectification property theoretically in co-oligomer diodes integrating a destructive quantum interference (DQI) feature. The results demonstrate that compared to a similar co-oligomer diode without DQI, the rectification ratio is enhanced by one order of magnitude in the presence of the DQI feature. Mechanism analysis indicates that the high rectification ratio benefits from the strong suppression of transmission in the off-state of the diode by the DQI dip. The strong rectification is attributed to the distinctly asymmetric shift of the DQI dip under bias voltages, which comes out as a result of both bias-induced shift of eigenvalues and redistribution of wave functions of all orbitals. The effect of energy level alignment between the two segments of the co-oligomer on the rectification is also discussed. This work provides a valid way to enhance the performance of intrinsic co-oligomer diodes, a promising approach for molecular circuit design.

Key words: quantum interference, molecular rectification, co-oligomer

中图分类号:  (Molecular electronic devices)

  • 85.65.+h
72.80.Le (Polymers; organic compounds (including organic semiconductors)) 73.23.-b (Electronic transport in mesoscopic systems)