中国物理B ›› 2025, Vol. 34 ›› Issue (10): 106103-106103.doi: 10.1088/1674-1056/adf9fb

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Displacement damage of the space broad-spectrum proton in semiconductor materials

Yue-Qian Jiang(姜月千)1,†, Li-Chao Tian(田立朝)1,†, Guo-Bo Zhang(张国博)1,‡, Run-Zhou Yu(余润洲)1, Bi-Hao Xu(徐碧浩)1, Xiang-Cheng Li(李翔城)2, Yan-Qing Deng(邓彦卿)2, De-Bin Zou(邹德滨)1, Tong Wu(吴桐)2, Yan-Yun Ma(马燕云)3,4, and Xiao-Hu Yang(杨晓虎)1,§   

  1. 1 College of Science, National University of Defense Technology, Changsha 410073, China;
    2 College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China;
    3 School of Automation and Electronic Information, Xiangtan University, Hunan 411105, China;
    4 School of Physics and Electronics, Hunan University, Changsha 410082, China
  • 收稿日期:2025-06-10 修回日期:2025-07-30 接受日期:2025-08-11 发布日期:2025-09-25
  • 通讯作者: Guo-Bo Zhang, Xiao-Hu Yang E-mail:zgb830@163.com;xiaohu.yang@aliyun.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12475252, 12175309, and 12175310), the Fund of National University of Defense Technology (Grant No. 22-ZZCX-068), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDA25050200 and XDA25010100), and the Natural Science Foundation of Hunan Province, China (Grant No. 2025JJ20007).

Displacement damage of the space broad-spectrum proton in semiconductor materials

Yue-Qian Jiang(姜月千)1,†, Li-Chao Tian(田立朝)1,†, Guo-Bo Zhang(张国博)1,‡, Run-Zhou Yu(余润洲)1, Bi-Hao Xu(徐碧浩)1, Xiang-Cheng Li(李翔城)2, Yan-Qing Deng(邓彦卿)2, De-Bin Zou(邹德滨)1, Tong Wu(吴桐)2, Yan-Yun Ma(马燕云)3,4, and Xiao-Hu Yang(杨晓虎)1,§   

  1. 1 College of Science, National University of Defense Technology, Changsha 410073, China;
    2 College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China;
    3 School of Automation and Electronic Information, Xiangtan University, Hunan 411105, China;
    4 School of Physics and Electronics, Hunan University, Changsha 410082, China
  • Received:2025-06-10 Revised:2025-07-30 Accepted:2025-08-11 Published:2025-09-25
  • Contact: Guo-Bo Zhang, Xiao-Hu Yang E-mail:zgb830@163.com;xiaohu.yang@aliyun.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12475252, 12175309, and 12175310), the Fund of National University of Defense Technology (Grant No. 22-ZZCX-068), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDA25050200 and XDA25010100), and the Natural Science Foundation of Hunan Province, China (Grant No. 2025JJ20007).

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摘要： Displacement damage induced by high-energy protons in the space radiation environment presents a serious risk to the reliability of spacecraft materials and onboard electronics. Nevertheless, studies on displacement damage induced by space-based broad-spectrum protons are still limited. In this paper, the nonionizing energy loss (NIEL) of space broad-spectrum protons at different orbital altitudes in semiconductor materials is investigated using Geant4 Monte Carlo simulations. We find that the NIEL of silicon (Si) and gallium arsenide (GaAs) first increases and then decreases with orbital altitude, and that shielding effects can result in either the saturation or continuous increase of NIEL, depending on the shielding layer thickness. A fast NIEL calculation method for arbitrary broad spectra is proposed based on statistical probability principles and the effective proton proportion. Meanwhile, a more uniform spatial distribution of mean damage energy per source particle ($T_{\rm dam}$) deposition from broad-spectrum protons can be achieved by increasing the shielding layer thickness and lowering the orbital altitude. Notably, the relative contribution of displacement damage caused by nuclear reactions decreases with increasing orbital altitude and shielding layer thickness. The results provide a quantitative reference for space displacement damage in semiconductor materials.

关键词: nonionizing energy loss, space broad-spectrum protons, shielding layer, Geant4

Abstract: Displacement damage induced by high-energy protons in the space radiation environment presents a serious risk to the reliability of spacecraft materials and onboard electronics. Nevertheless, studies on displacement damage induced by space-based broad-spectrum protons are still limited. In this paper, the nonionizing energy loss (NIEL) of space broad-spectrum protons at different orbital altitudes in semiconductor materials is investigated using Geant4 Monte Carlo simulations. We find that the NIEL of silicon (Si) and gallium arsenide (GaAs) first increases and then decreases with orbital altitude, and that shielding effects can result in either the saturation or continuous increase of NIEL, depending on the shielding layer thickness. A fast NIEL calculation method for arbitrary broad spectra is proposed based on statistical probability principles and the effective proton proportion. Meanwhile, a more uniform spatial distribution of mean damage energy per source particle ($T_{\rm dam}$) deposition from broad-spectrum protons can be achieved by increasing the shielding layer thickness and lowering the orbital altitude. Notably, the relative contribution of displacement damage caused by nuclear reactions decreases with increasing orbital altitude and shielding layer thickness. The results provide a quantitative reference for space displacement damage in semiconductor materials.

Key words: nonionizing energy loss, space broad-spectrum protons, shielding layer, Geant4

中图分类号:  (Physical radiation effects, radiation damage)

  • 61.80.-x
61.80.Jh (Ion radiation effects) 61.82.Fk (Semiconductors) 42.88.+h (Environmental and radiation effects on optical elements, devices, and systems)