Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

doi:10.1088/1674-1056/22/5/059501

中国物理B ›› 2013, Vol. 22 ›› Issue (5): 59501-059501.doi: 10.1088/1674-1056/22/5/059501

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇下一篇

Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

耿超^{a b}, 刘杰^a, 习凯^{a b}, 张战刚^{a b}, 古松^{a b}, 侯明东^a, 孙友梅^a, 段敬来^a, 姚会军^a, 莫丹^a

a Institute of Modern Physiscs, Chinese Academy of Sciences, Lanzhou 730000, China;
b University of Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2012-11-29 修回日期:2012-12-21 出版日期:2013-04-01 发布日期:2013-04-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).

Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

Geng Chao (耿超)^{a b}, Liu Jie (刘杰)^a, Xi Kai (习凯)^{a b}, Zhang Zhan-Gang (张战刚)^{a b}, Gu Song (古松)^{a b}, Hou Ming-Dong (侯明东)^a, Sun You-Mei (孙友梅)^a, Duan Jing-Lai (段敬来)^a, Yao Hui-Jun (姚会军)^a, Mo Dan (莫丹)^a

a Institute of Modern Physiscs, Chinese Academy of Sciences, Lanzhou 730000, China;
b University of Chinese Academy of Sciences, Beijing 100190, China

Received:2012-11-29 Revised:2012-12-21 Online:2013-04-01 Published:2013-04-01
Contact: Liu Jie E-mail:j.liu@impcas.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).

摘要/Abstract

摘要： We investigate the impact of heavy ion irradiation on hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.

关键词: Geant4, multiple-bit upset (MBU), critical charge, spacing between adjacent cells

Abstract: We investigate the impact of heavy ion irradiation on hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.

Key words: Geant4, multiple-bit upset (MBU), critical charge, spacing between adjacent cells

中图分类号: (Observation and data reduction techniques; computer modeling and simulation)

95.75.-z

61.82.Fk (Semiconductors) 24.10.Lx (Monte Carlo simulations (including hadron and parton cascades and string breaking models))

耿超, 刘杰, 习凯, 张战刚, 古松, 侯明东, 孙友梅, 段敬来, 姚会军, 莫丹. Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence[J]. 中国物理B, 2013, 22(5): 59501-059501.

Geng Chao (耿超), Liu Jie (刘杰), Xi Kai (习凯), Zhang Zhan-Gang (张战刚), Gu Song (古松), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Duan Jing-Lai (段敬来), Yao Hui-Jun (姚会军), Mo Dan (莫丹). Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence[J]. Chin. Phys. B, 2013, 22(5): 59501-059501.

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Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

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