Simulation of positron backscattering and implantation profiles using Geant4 code

doi:10.1088/1674-1056/24/10/107803

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107803-107803.doi: 10.1088/1674-1056/24/10/107803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Simulation of positron backscattering and implantation profiles using Geant4 code

黄世娟^{a b}, 潘子文^{a b}, 刘建党^{a b}, 韩荣典^{a b}, 叶邦角^{a b}

a Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China;
b State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026, China

收稿日期:2015-04-17 修回日期:2015-07-07 出版日期:2015-10-05 发布日期:2015-10-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11175171 and 11105139).

Simulation of positron backscattering and implantation profiles using Geant4 code

Huang Shi-Juan (黄世娟)^{a b}, Pan Zi-Wen (潘子文)^{a b}, Liu Jian-Dang (刘建党)^{a b}, Han Rong-Dian (韩荣典)^{a b}, Ye Bang-Jiao (叶邦角)^{a b}

a Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China;
b State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026, China

Received:2015-04-17 Revised:2015-07-07 Online:2015-10-05 Published:2015-10-05
Contact: Ye Bang-Jiao E-mail:bjye@ustc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11175171 and 11105139).

摘要/Abstract

摘要： For the proper interpretation of the experimental data produced in slow positron beam technique, the positron implantation properties are studied carefully using the latest Geant4 code. The simulated backscattering coefficients, the implantation profiles, and the median implantation depths for mono-energetic positrons with energy range from 1 keV to 50 keV normally incident on different crystals are reported. Compared with the previous experimental results, our simulation backscattering coefficients are in reasonable agreement, and we think that the accuracy may be related to the structures of the host materials in the Geant4 code. Based on the reasonable simulated backscattering coefficients, the adjustable parameters of the implantation profiles which are dependent on materials and implantation energies are obtained. The most important point is that we calculate the positron backscattering coefficients and median implantation depths in amorphous polymers for the first time and our simulations are in fairly good agreement with the previous experimental results.

关键词: positron beam, backscattering coefficient, implantation profile, Geant4

Abstract: For the proper interpretation of the experimental data produced in slow positron beam technique, the positron implantation properties are studied carefully using the latest Geant4 code. The simulated backscattering coefficients, the implantation profiles, and the median implantation depths for mono-energetic positrons with energy range from 1 keV to 50 keV normally incident on different crystals are reported. Compared with the previous experimental results, our simulation backscattering coefficients are in reasonable agreement, and we think that the accuracy may be related to the structures of the host materials in the Geant4 code. Based on the reasonable simulated backscattering coefficients, the adjustable parameters of the implantation profiles which are dependent on materials and implantation energies are obtained. The most important point is that we calculate the positron backscattering coefficients and median implantation depths in amorphous polymers for the first time and our simulations are in fairly good agreement with the previous experimental results.

Key words: positron beam, backscattering coefficient, implantation profile, Geant4

中图分类号: (Interactions of particles and radiation with matter)

78.70.-g

78.70.Bj (Positron annihilation)

黄世娟, 潘子文, 刘建党, 韩荣典, 叶邦角. Simulation of positron backscattering and implantation profiles using Geant4 code[J]. 中国物理B, 2015, 24(10): 107803-107803.

Huang Shi-Juan (黄世娟), Pan Zi-Wen (潘子文), Liu Jian-Dang (刘建党), Han Rong-Dian (韩荣典), Ye Bang-Jiao (叶邦角). Simulation of positron backscattering and implantation profiles using Geant4 code[J]. Chin. Phys. B, 2015, 24(10): 107803-107803.

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Simulation of positron backscattering and implantation profiles using Geant4 code

Simulation of positron backscattering and implantation profiles using Geant4 code

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