中国物理B ›› 2026, Vol. 35 ›› Issue (1): 17302-017302.doi: 10.1088/1674-1056/adee88

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Hydrothermal synthesis and nonvolatile resistive switching properties of α-Fe2O3 nanosheet arrays

Zhi-Qiang Yu(余志强)1,2,3,†, Xin-Wei Zhao(赵新为)1, Bao-Sheng Liu(刘宝生)1, Tang-You Sun(孙堂友)4, and Zhi-Mou Xu(徐智谋)3,á   

  1. 1 School of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China;
    2 School of Computer and Information Technology, Hohhot Minzu College, Hohhot 010051, China;
    3 Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
    4 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
  • 收稿日期:2025-03-30 修回日期:2025-06-28 接受日期:2025-07-11 发布日期:2026-01-05
  • 通讯作者: Zhi-Qiang Yu, Zhi-Mou Xu E-mail:zhiqiangyu@alumni.hust.edu.cn;xuzhimou@mail.hust.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62341305 and 22269002), the Natural Science Foundation of Guangxi Zhuang Autonomous Region, China (Grant No. 2024GXNSFFA010007), the Science and Technology Project of Guangxi Zhuang Autonomous Region, China (Grant No. AD19110038), the Key Laboratory of AI and Information Processing, Education Department of Guangxi Zhuang Autonomous Region (Grant No. 2024GXZDSY015), and the Innovation Project of Guangxi University of Science and Technology Graduate Education (Grant No. GKYC202408).

Hydrothermal synthesis and nonvolatile resistive switching properties of α-Fe2O3 nanosheet arrays

Zhi-Qiang Yu(余志强)1,2,3,†, Xin-Wei Zhao(赵新为)1, Bao-Sheng Liu(刘宝生)1, Tang-You Sun(孙堂友)4, and Zhi-Mou Xu(徐智谋)3,á   

  1. 1 School of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China;
    2 School of Computer and Information Technology, Hohhot Minzu College, Hohhot 010051, China;
    3 Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
    4 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
  • Received:2025-03-30 Revised:2025-06-28 Accepted:2025-07-11 Published:2026-01-05
  • Contact: Zhi-Qiang Yu, Zhi-Mou Xu E-mail:zhiqiangyu@alumni.hust.edu.cn;xuzhimou@mail.hust.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62341305 and 22269002), the Natural Science Foundation of Guangxi Zhuang Autonomous Region, China (Grant No. 2024GXNSFFA010007), the Science and Technology Project of Guangxi Zhuang Autonomous Region, China (Grant No. AD19110038), the Key Laboratory of AI and Information Processing, Education Department of Guangxi Zhuang Autonomous Region (Grant No. 2024GXZDSY015), and the Innovation Project of Guangxi University of Science and Technology Graduate Education (Grant No. GKYC202408).

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摘要： A facile one-step hydrothermal method has been reported to synthesize the $\alpha $-Fe$_{2}$O$_{3}$ nanosheet arrays with the preferred orientation along the [104] direction on the ITO substrate. The $\alpha $-Fe$_{2}$O$_{3}$ nanosheet arrays-based W/$\alpha $-Fe$_{2}$O$_{3}$/ITO memristor has been achieved by depositing the circular W top electrodes on the $\alpha $-Fe$_{2}$O$_{3}$ nanosheet arrays. The as-prepared W/$\alpha $-Fe$_{2}$O$_{3}$/ITO memristor shows a reliable nonvolatile bipolar resistive switching behavior with the high resistance ratio of about 10$^{3}$ at the reading voltage of 0.1 V, good resistance retention over 10$^{3 }$ s, ultralow set voltage of $-0.6$ V and reset voltage of 0.7 V, and good durability. In addition, the tunneling conduction mechanism modified by the oxygen vacancies has been proposed and suggested to be responsible for the nonvolatile resistive switching behavior of the as-prepared W/$\alpha $-Fe$_{2}$O$_{3}$/ITO memristor. This work demonstrates that the as-prepared $\alpha $-Fe$_{2}$O$_{3}$ nanosheet arrays-based W/$\alpha $-Fe$_{2}$O$_{3}$/ITO memristor would be a promising candidate for further ultralow power nonvolatile memory applications.

关键词: hydrothermal method, $\alpha $-Fe$_{2}$O$_{3}$ nanosheet arrays, nonvolatile, tunneling conduction mechanism, oxygen vacancies

Abstract: A facile one-step hydrothermal method has been reported to synthesize the $\alpha $-Fe$_{2}$O$_{3}$ nanosheet arrays with the preferred orientation along the [104] direction on the ITO substrate. The $\alpha $-Fe$_{2}$O$_{3}$ nanosheet arrays-based W/$\alpha $-Fe$_{2}$O$_{3}$/ITO memristor has been achieved by depositing the circular W top electrodes on the $\alpha $-Fe$_{2}$O$_{3}$ nanosheet arrays. The as-prepared W/$\alpha $-Fe$_{2}$O$_{3}$/ITO memristor shows a reliable nonvolatile bipolar resistive switching behavior with the high resistance ratio of about 10$^{3}$ at the reading voltage of 0.1 V, good resistance retention over 10$^{3 }$ s, ultralow set voltage of $-0.6$ V and reset voltage of 0.7 V, and good durability. In addition, the tunneling conduction mechanism modified by the oxygen vacancies has been proposed and suggested to be responsible for the nonvolatile resistive switching behavior of the as-prepared W/$\alpha $-Fe$_{2}$O$_{3}$/ITO memristor. This work demonstrates that the as-prepared $\alpha $-Fe$_{2}$O$_{3}$ nanosheet arrays-based W/$\alpha $-Fe$_{2}$O$_{3}$/ITO memristor would be a promising candidate for further ultralow power nonvolatile memory applications.

Key words: hydrothermal method, $\alpha $-Fe$_{2}$O$_{3}$ nanosheet arrays, nonvolatile, tunneling conduction mechanism, oxygen vacancies

中图分类号:  (Metal-insulator-metal structures)

  • 73.40.Rw
72.60.+g (Mixed conductivity and conductivity transitions) 72.80.Ga (Transition-metal compounds)