中国物理B ›› 2025, Vol. 34 ›› Issue (12): 127302-127302.doi: 10.1088/1674-1056/ade1c2

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Sol-gel synthesis and nonvolatile resistive switching behaviors of wurtzite phase ZnO nanofilms

Zhi-Qiang Yu(余志强)1,2,4,†, Jin-Hao Jia(贾金皓)1, Mei-Lian Ou(欧梅莲)1, Tang-You Sun(孙堂友)3,4,‡, and Zhi-Mou Xu(徐智谋)4   

  1. 1 School of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China;
    2 School of Computer and Information Technology, Hohhot Minzu College, Hohhot 010051, China;
    3 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
    4 Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
  • 收稿日期:2025-04-10 修回日期:2025-05-11 接受日期:2025-06-06 发布日期:2025-12-09
  • 通讯作者: Zhi-Qiang Yu, Tang-You Sun E-mail:zhiqiangyu@alumni.hust.edu.cn;suntangyou@guet.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62341305, 61805053, and 22269002) and the Science and Technology Project of Guangxi Zhuang Autonomous Region, China (Grant Nos. AD19110038 and AD21238033).

Sol-gel synthesis and nonvolatile resistive switching behaviors of wurtzite phase ZnO nanofilms

Zhi-Qiang Yu(余志强)1,2,4,†, Jin-Hao Jia(贾金皓)1, Mei-Lian Ou(欧梅莲)1, Tang-You Sun(孙堂友)3,4,‡, and Zhi-Mou Xu(徐智谋)4   

  1. 1 School of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China;
    2 School of Computer and Information Technology, Hohhot Minzu College, Hohhot 010051, China;
    3 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
    4 Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
  • Received:2025-04-10 Revised:2025-05-11 Accepted:2025-06-06 Published:2025-12-09
  • Contact: Zhi-Qiang Yu, Tang-You Sun E-mail:zhiqiangyu@alumni.hust.edu.cn;suntangyou@guet.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62341305, 61805053, and 22269002) and the Science and Technology Project of Guangxi Zhuang Autonomous Region, China (Grant Nos. AD19110038 and AD21238033).

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摘要： A facile sol-gel method and heating treatment process have been reported to synthesize the wurtzite phase ZnO nanofilms with the preferential growth orientation along the [001] direction on the FTO substrates. The as-prepared wurtzite phase ZnO nanofilms-based memristor with the W/ZnO/FTO sandwich has demonstrated a reliable nonvolatile bipolar resistive switching behaviors with an ultralow set voltage of about +3 V and reset voltage of approximately -3.6 V, high resistive switching ratio of more than two orders of magnitude, good resistance retention ability (up to 104 s), and excellent durability. Furthermore, the resistive switching behavior in the low-resistance state is attributed to the Ohmic conduction mechanism, while the resistive switching behavior in the high-resistance state is controlled by the trap-modulated space charge limited current (SCLC) mechanism. In addition, the conductive filament model regulated by the oxygen vacancies has been proposed, where the nonvolatile bipolar resistive switching behaviors could be attributed to the formation and rupture of conductive filaments in the W/ZnO/FTO memristor. This work demonstrates that the as-prepared wurtzite phase ZnO nanofilms-based W/ZnO/FTO memristor has promising prospects in future nonvolatile memory applications.

关键词: sol-gel, ZnO nanofilms, memristor, nonvolatile, oxygen vacancies

Abstract: A facile sol-gel method and heating treatment process have been reported to synthesize the wurtzite phase ZnO nanofilms with the preferential growth orientation along the [001] direction on the FTO substrates. The as-prepared wurtzite phase ZnO nanofilms-based memristor with the W/ZnO/FTO sandwich has demonstrated a reliable nonvolatile bipolar resistive switching behaviors with an ultralow set voltage of about +3 V and reset voltage of approximately -3.6 V, high resistive switching ratio of more than two orders of magnitude, good resistance retention ability (up to 104 s), and excellent durability. Furthermore, the resistive switching behavior in the low-resistance state is attributed to the Ohmic conduction mechanism, while the resistive switching behavior in the high-resistance state is controlled by the trap-modulated space charge limited current (SCLC) mechanism. In addition, the conductive filament model regulated by the oxygen vacancies has been proposed, where the nonvolatile bipolar resistive switching behaviors could be attributed to the formation and rupture of conductive filaments in the W/ZnO/FTO memristor. This work demonstrates that the as-prepared wurtzite phase ZnO nanofilms-based W/ZnO/FTO memristor has promising prospects in future nonvolatile memory applications.

Key words: sol-gel, ZnO nanofilms, memristor, nonvolatile, oxygen vacancies

中图分类号:  (Metal-insulator-metal structures)

  • 73.40.Rw
72.60.+g (Mixed conductivity and conductivity transitions) 72.80.Ga (Transition-metal compounds)