中国物理B ›› 2017, Vol. 26 ›› Issue (7): 77701-077701.doi: 10.1088/1674-1056/26/7/077701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Electrical analysis of inter-growth structured Bi4Ti3O12–Na0.5Bi4.5Ti4O15 ceramics

Xiangping Jiang(江向平), Yalin Jiang(江亚林), Xingan Jiang(江兴安), Chao Chen(陈超), Na Tu(涂娜), Yunjing Chen(陈云婧)   

  1. Jiangxi Key Laboratory of Advanced Ceramic Materials, Department of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333001, China
  • 收稿日期:2016-12-15 修回日期:2017-04-02 出版日期:2017-07-05 发布日期:2017-07-05
  • 通讯作者: Xingan Jiang, Chao Chen E-mail:XINGAN.JIANG@Yahoo.com;cc2762@163.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos.51562014,51262009,and 51602135).

Electrical analysis of inter-growth structured Bi4Ti3O12–Na0.5Bi4.5Ti4O15 ceramics

Xiangping Jiang(江向平), Yalin Jiang(江亚林), Xingan Jiang(江兴安), Chao Chen(陈超), Na Tu(涂娜), Yunjing Chen(陈云婧)   

  1. Jiangxi Key Laboratory of Advanced Ceramic Materials, Department of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333001, China
  • Received:2016-12-15 Revised:2017-04-02 Online:2017-07-05 Published:2017-07-05
  • Contact: Xingan Jiang, Chao Chen E-mail:XINGAN.JIANG@Yahoo.com;cc2762@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos.51562014,51262009,and 51602135).

摘要: Inter-growth bismuth layer-structured ferroelectrics (BLSFs), Bi4Ti3O12–Na0.5Bi4.5Ti4O15 (BIT–NBT), were successfully synthesized using the traditional solid-state reaction method. X-ray diffraction (XRD) Rietveld refinements were conducted using GSAS software. Good agreement and low residual are obtained. The XRD diffraction peaks can be well indexed into I2cm space group. The inter-growth structure was further observed in the high-resolution TEM image. Dielectric and impedance properties were measured and systematically analyzed. At the temperature range 763–923 K (below Tc), doubly ionized oxygen vacancies (OVs) are localized and the short-range hopping leads to the relaxation processes with an activation energy of 0.79–1.01 eV. Above Tc, the doubly charged OVs are delocalized and become free ones, which contribute to the long-range dc conduction. The reduction in relaxation species gives rise to a higher relaxation activation energy~1.6 eV.

关键词: Bi4Ti3O12–, Na0.5Bi4.5Ti4O15, impedance spectroscopy, oxygen vacancies-related defect dipoles, electrical analysis

Abstract: Inter-growth bismuth layer-structured ferroelectrics (BLSFs), Bi4Ti3O12–Na0.5Bi4.5Ti4O15 (BIT–NBT), were successfully synthesized using the traditional solid-state reaction method. X-ray diffraction (XRD) Rietveld refinements were conducted using GSAS software. Good agreement and low residual are obtained. The XRD diffraction peaks can be well indexed into I2cm space group. The inter-growth structure was further observed in the high-resolution TEM image. Dielectric and impedance properties were measured and systematically analyzed. At the temperature range 763–923 K (below Tc), doubly ionized oxygen vacancies (OVs) are localized and the short-range hopping leads to the relaxation processes with an activation energy of 0.79–1.01 eV. Above Tc, the doubly charged OVs are delocalized and become free ones, which contribute to the long-range dc conduction. The reduction in relaxation species gives rise to a higher relaxation activation energy~1.6 eV.

Key words: Bi4Ti3O12–Na0.5Bi4.5Ti4O15, impedance spectroscopy, oxygen vacancies-related defect dipoles, electrical analysis

中图分类号:  (Piezoelectric and electrostrictive constants)

  • 77.65.Bn
77.80.B- (Phase transitions and Curie point) 77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)