Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin-orbit coupling

doi:10.1088/1674-1056/ad6b83

中国物理B ›› 2024, Vol. 33 ›› Issue (11): 118501-118501.doi: 10.1088/1674-1056/ad6b83

Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin-orbit coupling

Jia-Li Chen(陈嘉丽), Sai-Yan Chen(陈赛艳)‡, Li Wen(温丽), Xue-Li Cao(曹雪丽), and Mao-Wang Lu(卢卯旺)†

College of Physics and Electronic Information Engineering, Guilin University of Technology, Guilin 541004, China

收稿日期:2024-05-19 修回日期:2024-08-01 接受日期:2024-08-06 出版日期:2024-11-15 发布日期:2024-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 62164005).

Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin-orbit coupling

Jia-Li Chen(陈嘉丽), Sai-Yan Chen(陈赛艳)‡, Li Wen(温丽), Xue-Li Cao(曹雪丽), and Mao-Wang Lu(卢卯旺)†

College of Physics and Electronic Information Engineering, Guilin University of Technology, Guilin 541004, China

Received:2024-05-19 Revised:2024-08-01 Accepted:2024-08-06 Online:2024-11-15 Published:2024-11-15
Contact: Sai-Yan Chen, Mao-Wang Lu E-mail:maowanglu@glut.edu.cn;sychen02@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 62164005).

摘要/Abstract

摘要： Combining theory and computation, we explore the Goos-Hänchen (GH) effect for electrons in a single-layered semiconductor microstructure (SLSM) modulated by Dresselhaus spin-orbit coupling (SOC). GH displacement depends on electron spins thanks to Dresselhaus SOC, therefore electron spins can be separated from the space domain and spin-polarized electrons in semiconductors can be realized. Both the magnitude and sign of the spin polarization ratio change with the electron energy, in-plane wave vector, strain engineering and semiconductor layer thickness. The spin polarization ratio approaches a maximum at resonance; however, no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector. More importantly, the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness, giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.

关键词: semiconductor spintronics, single-layered semiconductor microstructure (SLSM), spin-orbit coupling (SOC), Goos-Hänchen (GH) effect, electron-spin polarization

Abstract: Combining theory and computation, we explore the Goos-Hänchen (GH) effect for electrons in a single-layered semiconductor microstructure (SLSM) modulated by Dresselhaus spin-orbit coupling (SOC). GH displacement depends on electron spins thanks to Dresselhaus SOC, therefore electron spins can be separated from the space domain and spin-polarized electrons in semiconductors can be realized. Both the magnitude and sign of the spin polarization ratio change with the electron energy, in-plane wave vector, strain engineering and semiconductor layer thickness. The spin polarization ratio approaches a maximum at resonance; however, no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector. More importantly, the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness, giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.

Key words: semiconductor spintronics, single-layered semiconductor microstructure (SLSM), spin-orbit coupling (SOC), Goos-Hänchen (GH) effect, electron-spin polarization

中图分类号: (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

85.75.-d

72.80.Ey (III-V and II-VI semiconductors) 71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect) 72.25.Dc (Spin polarized transport in semiconductors)

Jia-Li Chen(陈嘉丽), Sai-Yan Chen(陈赛艳), Li Wen(温丽), Xue-Li Cao(曹雪丽), and Mao-Wang Lu(卢卯旺). Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin-orbit coupling[J]. 中国物理B, 2024, 33(11): 118501-118501.

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Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin-orbit coupling

Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin-orbit coupling

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