中国物理B ›› 2023, Vol. 32 ›› Issue (11): 117502-117502.doi: 10.1088/1674-1056/acd8aa

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Investigation of magnetization reversal and domain structures in perpendicular synthetic antiferromagnets by first-order reversal curves and magneto-optical Kerr effect

Xiang-Qian Wang(王向谦)1,2, Jia-Nan Li(李佳楠)1,†, Kai-Zhou He(何开宙)2, Ming-Ling Xie(谢明玲)2, and Xu-Peng Zhu(朱旭鹏)1   

  1. 1 School of Physics Science and Technology, Lingnan Normal University, Zhanjiang 524048, China;
    2 Key Laboratory of Sensor and Sensor Technology, Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China
  • 收稿日期:2023-02-12 修回日期:2023-05-21 接受日期:2023-05-25 出版日期:2023-10-16 发布日期:2023-10-24
  • 通讯作者: Jia-Nan Li E-mail:lijn@lingnan.edu.cn
  • 基金资助:
    Project supported by the Natural Science Foundation of Gansu Province, China (Grant No. 22JR5RA775), the Science and Technology Program of Lanzhou, China (Grant No. 2021-1-157), the Guangdong Basic and Applied Basic Research Foundation, China (Grant Nos. 2020A1515110998 and 2022A1515012123), the Outstanding Youth Foundation of Gansu Academy of Science, China (Grant No. 2021YQ- 01), and the Innovative Team Construction Project of Gansu Academy of Sciences, China (Grant No. 2020CX005-01).

Investigation of magnetization reversal and domain structures in perpendicular synthetic antiferromagnets by first-order reversal curves and magneto-optical Kerr effect

Xiang-Qian Wang(王向谦)1,2, Jia-Nan Li(李佳楠)1,†, Kai-Zhou He(何开宙)2, Ming-Ling Xie(谢明玲)2, and Xu-Peng Zhu(朱旭鹏)1   

  1. 1 School of Physics Science and Technology, Lingnan Normal University, Zhanjiang 524048, China;
    2 Key Laboratory of Sensor and Sensor Technology, Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China
  • Received:2023-02-12 Revised:2023-05-21 Accepted:2023-05-25 Online:2023-10-16 Published:2023-10-24
  • Contact: Jia-Nan Li E-mail:lijn@lingnan.edu.cn
  • Supported by:
    Project supported by the Natural Science Foundation of Gansu Province, China (Grant No. 22JR5RA775), the Science and Technology Program of Lanzhou, China (Grant No. 2021-1-157), the Guangdong Basic and Applied Basic Research Foundation, China (Grant Nos. 2020A1515110998 and 2022A1515012123), the Outstanding Youth Foundation of Gansu Academy of Science, China (Grant No. 2021YQ- 01), and the Innovative Team Construction Project of Gansu Academy of Sciences, China (Grant No. 2020CX005-01).

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摘要： Perpendicular synthetic-antiferromagnet (p-SAF) has broad applications in spin-transfer-torque magnetic random access memory and magnetic sensors. In this study, the p-SAF films consisting of (Co/Ni)3]/Ir(tIr)/[(Ni/Co)3 are fabricated by magnetron sputtering technology. We study the domain structure and switching field distribution in p-SAF by changing the thickness of the infrared space layer. The strongest exchange coupling field (Hex) is observed when the thickness of Ir layer (tIr) is 0.7 nm and becoming weak according to the Ruderman-Kittel-Kasuya-Yosida-type coupling at 1.05 nm, 2.1 nm, 4.55 nm, and 4.9 nm in sequence. Furthermore, the domain switching process between the upper Co/Ni stack and the bottom Co/Ni stack is different because of the antiferromagnet coupling. Compared with ferromagnet coupling films, the antiferromagnet samples possess three irreversible reversal regions in the first-order reversal curve distribution. With tIr increasing, these irreversible reversal regions become denser and smaller. The results from this study will help us understand the details of the magnetization reversal process in the p-SAF.

关键词: perpendicular synthetic antiferromagnet, first-order reversal curves, magnetization reversal process, domain

Abstract: Perpendicular synthetic-antiferromagnet (p-SAF) has broad applications in spin-transfer-torque magnetic random access memory and magnetic sensors. In this study, the p-SAF films consisting of (Co/Ni)3]/Ir(tIr)/[(Ni/Co)3 are fabricated by magnetron sputtering technology. We study the domain structure and switching field distribution in p-SAF by changing the thickness of the infrared space layer. The strongest exchange coupling field (Hex) is observed when the thickness of Ir layer (tIr) is 0.7 nm and becoming weak according to the Ruderman-Kittel-Kasuya-Yosida-type coupling at 1.05 nm, 2.1 nm, 4.55 nm, and 4.9 nm in sequence. Furthermore, the domain switching process between the upper Co/Ni stack and the bottom Co/Ni stack is different because of the antiferromagnet coupling. Compared with ferromagnet coupling films, the antiferromagnet samples possess three irreversible reversal regions in the first-order reversal curve distribution. With tIr increasing, these irreversible reversal regions become denser and smaller. The results from this study will help us understand the details of the magnetization reversal process in the p-SAF.

Key words: perpendicular synthetic antiferromagnet, first-order reversal curves, magnetization reversal process, domain

中图分类号:  (Antiferromagnetics)

  • 75.50.Ee
75.70.Kw (Domain structure (including magnetic bubbles and vortices)) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields) 75.60.Jk (Magnetization reversal mechanisms)