Spin-orbit torque effect in silicon-based sputtered Mn3Sn film

doi:10.1088/1674-1056/ad6079

中国物理B ›› 2024, Vol. 33 ›› Issue (10): 107501-107501.doi: 10.1088/1674-1056/ad6079

Spin-orbit torque effect in silicon-based sputtered Mn₃Sn film

Sha Lu(卢莎)^1,†, Dequan Meng(孟德全)^1,†, Adnan Khan¹, Ziao Wang(王子傲)¹, Shiwei Chen(陈是位)^1,2,‡, and Shiheng Liang(梁世恒)^1,2,§

1 School of Physics, Hubei University, Wuhan 430062, China;
2 Key Laboratory for Intelligent Sensing System and Security of Ministry of Education, Wuhan 430062, China

收稿日期:2024-04-28 修回日期:2024-06-26 接受日期:2024-07-09 出版日期:2024-10-15 发布日期:2024-10-15
通讯作者: Shiwei Chen, Shiheng Liang E-mail:chenshw@hubu.edu.cn;shihengliang@hubu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2022YFE0103300), the National Natural Science Foundation of China (Grant No. 12274119), the Natural Science Foundation of Hubei Province (Grant No. 2022CFA088), and the Open Research Fund of Songshan Lake Materials Laboratory (Grant No. 2022SLABFN04).

Spin-orbit torque effect in silicon-based sputtered Mn₃Sn film

Sha Lu(卢莎)^1,†, Dequan Meng(孟德全)^1,†, Adnan Khan¹, Ziao Wang(王子傲)¹, Shiwei Chen(陈是位)^1,2,‡, and Shiheng Liang(梁世恒)^1,2,§

1 School of Physics, Hubei University, Wuhan 430062, China;
2 Key Laboratory for Intelligent Sensing System and Security of Ministry of Education, Wuhan 430062, China

Received:2024-04-28 Revised:2024-06-26 Accepted:2024-07-09 Online:2024-10-15 Published:2024-10-15
Contact: Shiwei Chen, Shiheng Liang E-mail:chenshw@hubu.edu.cn;shihengliang@hubu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2022YFE0103300), the National Natural Science Foundation of China (Grant No. 12274119), the Natural Science Foundation of Hubei Province (Grant No. 2022CFA088), and the Open Research Fund of Songshan Lake Materials Laboratory (Grant No. 2022SLABFN04).

摘要/Abstract

摘要： Noncollinear antiferromagnet Mn$_{3}$Sn has shown remarkable efficiency in charge-spin conversion, a novel magnetic spin Hall effect, and a stable topological antiferromagnetic state, which has resulted in great interest from researchers in the field of spin-orbit torque. Current research has primarily focused on the spin-orbit torque effect of epitaxially grown noncollinear antiferromagnet Mn$_{3}$Sn films. However, this method is not suitable for large-scale industrial preparation. In this study, amorphous Mn$_{3}$Sn films and Mn$_{3}$Sn/Py heterostructures were prepared using magnetron sputtering on silicon substrates. The spin-torque ferromagnetic resonance measurement demonstrated that only the conventional spin-orbit torque effect generated by in-plane polarized spin currents existed in the Mn$_{3}$Sn/Py heterostructure, with a spin-orbit torque efficiency of 0.016. Additionally, we prepared the perpendicular magnetized Mn$_{3}$Sn/CoTb heterostructure based on amorphous Mn$_{3}$Sn film, where the spin-orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density (3.9$\times10^{7}$ A/cm$^{2})$ compared to Ta/CoTb heterostructure. This research reveals the spin-orbit torque effect of amorphous Mn$_{3}$Sn films and establishes a foundation for further advancement in the practical application of Mn$_{3}$Sn materials in spintronic devices.

关键词: spintronics, noncollinear antiferromagnetism, spin-orbit torque

Abstract: Noncollinear antiferromagnet Mn$_{3}$Sn has shown remarkable efficiency in charge-spin conversion, a novel magnetic spin Hall effect, and a stable topological antiferromagnetic state, which has resulted in great interest from researchers in the field of spin-orbit torque. Current research has primarily focused on the spin-orbit torque effect of epitaxially grown noncollinear antiferromagnet Mn$_{3}$Sn films. However, this method is not suitable for large-scale industrial preparation. In this study, amorphous Mn$_{3}$Sn films and Mn$_{3}$Sn/Py heterostructures were prepared using magnetron sputtering on silicon substrates. The spin-torque ferromagnetic resonance measurement demonstrated that only the conventional spin-orbit torque effect generated by in-plane polarized spin currents existed in the Mn$_{3}$Sn/Py heterostructure, with a spin-orbit torque efficiency of 0.016. Additionally, we prepared the perpendicular magnetized Mn$_{3}$Sn/CoTb heterostructure based on amorphous Mn$_{3}$Sn film, where the spin-orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density (3.9$\times10^{7}$ A/cm$^{2})$ compared to Ta/CoTb heterostructure. This research reveals the spin-orbit torque effect of amorphous Mn$_{3}$Sn films and establishes a foundation for further advancement in the practical application of Mn$_{3}$Sn materials in spintronic devices.

Key words: spintronics, noncollinear antiferromagnetism, spin-orbit torque

中图分类号: (Magnetic anisotropy)

75.30.Gw

75.50.Ee (Antiferromagnetics) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Sha Lu(卢莎), Dequan Meng(孟德全), Adnan Khan, Ziao Wang(王子傲), Shiwei Chen(陈是位), and Shiheng Liang(梁世恒). Spin-orbit torque effect in silicon-based sputtered Mn₃Sn film[J]. 中国物理B, 2024, 33(10): 107501-107501.

Sha Lu(卢莎), Dequan Meng(孟德全), Adnan Khan, Ziao Wang(王子傲), Shiwei Chen(陈是位), and Shiheng Liang(梁世恒). Spin-orbit torque effect in silicon-based sputtered Mn₃Sn film[J]. Chin. Phys. B, 2024, 33(10): 107501-107501.

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Spin-orbit torque effect in silicon-based sputtered Mn₃Sn film

Spin-orbit torque effect in silicon-based sputtered Mn₃Sn film

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