Valleytronic topological filters in silicene-like inner-edge systems

doi:10.1088/1674-1056/ad0714

中国物理B ›› 2024, Vol. 33 ›› Issue (1): 18502-18502.doi: 10.1088/1674-1056/ad0714

所属专题： SPECIAL TOPIC — Valleytronics

Valleytronic topological filters in silicene-like inner-edge systems

Hang Xie(谢航)^1,2, Xiao-Long Lü(吕小龙)^3,†, and Jia-En Yang(杨加恩)^1,4,‡

1 College of Physics, Chongqing University, Chongqing 401331, China;
2 Chongqing Key Laboratory for Strongly-Coupled Physics, Chongqing University, Chongqing 401331, China;
3 College of Science, Guangxi University of Science and Technology, Liuzhou 545006, China;
4 School of Electronics and IoT, Chongqing College of Electronic Engineering, Chongqing 401331, China

收稿日期:2023-06-29 修回日期:2023-10-26 接受日期:2023-10-26 出版日期:2023-12-13 发布日期:2023-12-13
通讯作者: Xiao-Long Lü, Jia-En Yang E-mail:physicslxl@163.com;yangjiaen309@163.com
基金资助:
This work is supported by the National Natural Science Foundation of China (Grant Nos. 12204073 and 12147102), the Scientific and Technological Research Program of Chongqing Municipal Education Commission (Grant No. KJQN202303105), the Specific Research Project of Guangxi for Research Bases and Talents (Grant No. 2022AC21077) and the Foundation of Guangxi University of Science and Technology (Grant No. 21Z52).

Valleytronic topological filters in silicene-like inner-edge systems

Hang Xie(谢航)^1,2, Xiao-Long Lü(吕小龙)^3,†, and Jia-En Yang(杨加恩)^1,4,‡

1 College of Physics, Chongqing University, Chongqing 401331, China;
2 Chongqing Key Laboratory for Strongly-Coupled Physics, Chongqing University, Chongqing 401331, China;
3 College of Science, Guangxi University of Science and Technology, Liuzhou 545006, China;
4 School of Electronics and IoT, Chongqing College of Electronic Engineering, Chongqing 401331, China

Received:2023-06-29 Revised:2023-10-26 Accepted:2023-10-26 Online:2023-12-13 Published:2023-12-13
Contact: Xiao-Long Lü, Jia-En Yang E-mail:physicslxl@163.com;yangjiaen309@163.com
Supported by:
This work is supported by the National Natural Science Foundation of China (Grant Nos. 12204073 and 12147102), the Scientific and Technological Research Program of Chongqing Municipal Education Commission (Grant No. KJQN202303105), the Specific Research Project of Guangxi for Research Bases and Talents (Grant No. 2022AC21077) and the Foundation of Guangxi University of Science and Technology (Grant No. 21Z52).

摘要/Abstract

摘要： Inner edge state with spin and valley degrees of freedom is a promising candidate for designing a dissipationless device due to the topological protection. The central challenge for the application of the inner edge state is to generate and modulate the polarized currents. In this work, we discover a new mechanism to generate fully valley- and spin—valley-polarized current caused by the Bloch wavevector mismatch (BWM). Based on this mechanism, we design some serial-typed inner-edge filters. By using once of the BWM, the coincident states could be divided into transmitted and reflected modes, which can serve as a valley or spin—valley filter. In particular, while with twice of the BWM, the incident current is absolutely reflected to support an off state with a specified valley and spin, which is different from the gap effect. These findings give rise to a new platform for designing valleytronics and spin-valleytronics.

关键词: topological insulator, inner-edge state, valley polarization, spin polarization, quantum transport

Abstract: Inner edge state with spin and valley degrees of freedom is a promising candidate for designing a dissipationless device due to the topological protection. The central challenge for the application of the inner edge state is to generate and modulate the polarized currents. In this work, we discover a new mechanism to generate fully valley- and spin—valley-polarized current caused by the Bloch wavevector mismatch (BWM). Based on this mechanism, we design some serial-typed inner-edge filters. By using once of the BWM, the coincident states could be divided into transmitted and reflected modes, which can serve as a valley or spin—valley filter. In particular, while with twice of the BWM, the incident current is absolutely reflected to support an off state with a specified valley and spin, which is different from the gap effect. These findings give rise to a new platform for designing valleytronics and spin-valleytronics.

Key words: topological insulator, inner-edge state, valley polarization, spin polarization, quantum transport

中图分类号: (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

85.75.-d

05.60.Gg (Quantum transport) 73.20.At (Surface states, band structure, electron density of states) 73.63.-b (Electronic transport in nanoscale materials and structures)

Hang Xie(谢航), Xiao-Long Lü(吕小龙), and Jia-En Yang(杨加恩). Valleytronic topological filters in silicene-like inner-edge systems[J]. 中国物理B, 2024, 33(1): 18502-18502.

Hang Xie(谢航), Xiao-Long Lü(吕小龙), and Jia-En Yang(杨加恩). Valleytronic topological filters in silicene-like inner-edge systems[J]. Chin. Phys. B, 2024, 33(1): 18502-18502.

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Valleytronic topological filters in silicene-like inner-edge systems

Valleytronic topological filters in silicene-like inner-edge systems

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