中国物理B ›› 2024, Vol. 33 ›› Issue (2): 27501-027501.doi: 10.1088/1674-1056/ad0f85

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Oscillation of Dzyaloshinskii-Moriya interaction driven by weak electric fields

Runze Chen(陈润泽)1, Anni Cao(曹安妮)5, Xinran Wang(王馨苒)1,3, Yang Liu(柳洋)1, Hongxin Yang(杨洪新)4, and Weisheng Zhao(赵巍胜)1,2,3,†   

  1. 1 Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China;
    2 Hefei Innovation Research Institute, Beihang University, Hefei 230013, China;
    3 Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China;
    4 National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
    5 Beijing Microelectronics Technology Institute, Beijing 100076, China
  • 收稿日期:2023-09-13 修回日期:2023-11-13 接受日期:2023-11-24 出版日期:2024-01-16 发布日期:2024-01-19
  • 通讯作者: Weisheng Zhao E-mail:weisheng.zhao@buaa.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61627813, 62204018, and 61571023), the Beijing Municipal Science and Technology Project (Grant No. Z201100004220002), the National Key Technology Program of China (Grant No. 2017ZX01032101), the Program of Introducing Talents of Discipline to Universities in China (Grant No. B16001), and the VR Innovation Platform from Qingdao Science and Technology Commission.

Oscillation of Dzyaloshinskii-Moriya interaction driven by weak electric fields

Runze Chen(陈润泽)1, Anni Cao(曹安妮)5, Xinran Wang(王馨苒)1,3, Yang Liu(柳洋)1, Hongxin Yang(杨洪新)4, and Weisheng Zhao(赵巍胜)1,2,3,†   

  1. 1 Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China;
    2 Hefei Innovation Research Institute, Beihang University, Hefei 230013, China;
    3 Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China;
    4 National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
    5 Beijing Microelectronics Technology Institute, Beijing 100076, China
  • Received:2023-09-13 Revised:2023-11-13 Accepted:2023-11-24 Online:2024-01-16 Published:2024-01-19
  • Contact: Weisheng Zhao E-mail:weisheng.zhao@buaa.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61627813, 62204018, and 61571023), the Beijing Municipal Science and Technology Project (Grant No. Z201100004220002), the National Key Technology Program of China (Grant No. 2017ZX01032101), the Program of Introducing Talents of Discipline to Universities in China (Grant No. B16001), and the VR Innovation Platform from Qingdao Science and Technology Commission.

摘要: Dzyaloshinskii-Moriya interaction (DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall (DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin-orbit coupling (SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime (<10-2 V/nm). Brillouin light scattering (BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI (VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin-orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.

关键词: Dzyaloshinskii-Moriya interaction, weak electric field control effect, Rashba spin-orbit coupling, interfacial orbital hybridization

Abstract: Dzyaloshinskii-Moriya interaction (DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall (DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin-orbit coupling (SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime (<10-2 V/nm). Brillouin light scattering (BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI (VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin-orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.

Key words: Dzyaloshinskii-Moriya interaction, weak electric field control effect, Rashba spin-orbit coupling, interfacial orbital hybridization

中图分类号:  (Magnetotransport phenomena; materials for magnetotransport)

  • 75.47.-m
85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields) 71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)