中国物理B ›› 2024, Vol. 33 ›› Issue (5): 57701-057701.doi: 10.1088/1674-1056/ad2a71

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Structure, ferroelectric, and enhanced fatigue properties of sol-gel-processed new Bi-based perovskite thin films of Bi(Cu1/2Ti1/2)O3-PbTiO3

Wei-Bin Song(宋伟宾)1,2, Guo-Qiang Xi(席国强)3, Zhao Pan(潘昭)2,†, Jin Liu(刘锦)2, Xu-Bin Ye(叶旭斌)2, Zhe-Hong Liu(刘哲宏)2, Xiao Wang(王潇)2, Peng-Fei Shan(单鹏飞)2, Lin-Xing Zhang(张林兴)3, Nian-Peng Lu(鲁年鹏)2,4, Long-Long Fan(樊龙龙)5, Xiao-Mei Qin(秦晓梅)1,‡, and You-Wen Long(龙有文)2,4,§   

  1. 1 Department of Physics, Shanghai Normal University, Shanghai 200234, China;
    2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China;
    4 Songshan Lake Materials Laboratory, Dongguan 523808, China;
    5 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2023-12-12 修回日期:2024-02-04 接受日期:2024-02-19 出版日期:2024-05-20 发布日期:2024-05-20
  • 通讯作者: Zhao Pan, Xiao-Mei Qin, You-Wen Long E-mail:zhaopan@iphy.ac.cn;xmqin@shnu.edu.cn;ywlong@iphy.ac.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA1400300), the National Natural Science Foundation of China (Grant Nos. 22271309, 21805215, 11934017, 12261131499, and 11921004), the Beijing Natural Science Foundation (Grant No. Z200007), and the Fund from the Chinese Academy of Sciences (Grant No. XDB33000000).

Structure, ferroelectric, and enhanced fatigue properties of sol-gel-processed new Bi-based perovskite thin films of Bi(Cu1/2Ti1/2)O3-PbTiO3

Wei-Bin Song(宋伟宾)1,2, Guo-Qiang Xi(席国强)3, Zhao Pan(潘昭)2,†, Jin Liu(刘锦)2, Xu-Bin Ye(叶旭斌)2, Zhe-Hong Liu(刘哲宏)2, Xiao Wang(王潇)2, Peng-Fei Shan(单鹏飞)2, Lin-Xing Zhang(张林兴)3, Nian-Peng Lu(鲁年鹏)2,4, Long-Long Fan(樊龙龙)5, Xiao-Mei Qin(秦晓梅)1,‡, and You-Wen Long(龙有文)2,4,§   

  1. 1 Department of Physics, Shanghai Normal University, Shanghai 200234, China;
    2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China;
    4 Songshan Lake Materials Laboratory, Dongguan 523808, China;
    5 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • Received:2023-12-12 Revised:2024-02-04 Accepted:2024-02-19 Online:2024-05-20 Published:2024-05-20
  • Contact: Zhao Pan, Xiao-Mei Qin, You-Wen Long E-mail:zhaopan@iphy.ac.cn;xmqin@shnu.edu.cn;ywlong@iphy.ac.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA1400300), the National Natural Science Foundation of China (Grant Nos. 22271309, 21805215, 11934017, 12261131499, and 11921004), the Beijing Natural Science Foundation (Grant No. Z200007), and the Fund from the Chinese Academy of Sciences (Grant No. XDB33000000).

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摘要： Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties. New Bi-based perovskite thin films Bi(Cu$_{1/2}$Ti$_{1/2}$)O$_{3}$-PbTiO$_{3}$ (BCT-PT) are deposited on Pt(111)/Ti/SiO$_{2}$/Si substrates in the present study by the traditional sol-gel method. Their structures and related ferroelectric and fatigue characteristics are studied in-depth. The BCT-PT thin films exhibit good crystallization within the phase-pure perovskite structure, besides, they have a predominant (100) orientation together with a dense and homogeneous microstructure. The remnant polarization (2$P_{\rm r}$) values at 30 μC/cm$^{2}$ and 16 μC/cm$^{2}$ are observed in 0.1BCT-0.9PT and 0.2BCT-0.8PT thin films, respectively. More intriguingly, although the polarization values are not so high, 0.2BCT-0.8PT thin films show outstanding polarization fatigue properties, with a high switchable polarization of 93.6% of the starting values after 10$^{8}$ cycles, indicating promising applications in ferroelectric memories.

关键词: ferroelectric, thin films, perovskite, PbTiO$_{3}$-BiMeO$_{3}$

Abstract: Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties. New Bi-based perovskite thin films Bi(Cu$_{1/2}$Ti$_{1/2}$)O$_{3}$-PbTiO$_{3}$ (BCT-PT) are deposited on Pt(111)/Ti/SiO$_{2}$/Si substrates in the present study by the traditional sol-gel method. Their structures and related ferroelectric and fatigue characteristics are studied in-depth. The BCT-PT thin films exhibit good crystallization within the phase-pure perovskite structure, besides, they have a predominant (100) orientation together with a dense and homogeneous microstructure. The remnant polarization (2$P_{\rm r}$) values at 30 μC/cm$^{2}$ and 16 μC/cm$^{2}$ are observed in 0.1BCT-0.9PT and 0.2BCT-0.8PT thin films, respectively. More intriguingly, although the polarization values are not so high, 0.2BCT-0.8PT thin films show outstanding polarization fatigue properties, with a high switchable polarization of 93.6% of the starting values after 10$^{8}$ cycles, indicating promising applications in ferroelectric memories.

Key words: ferroelectric, thin films, perovskite, PbTiO$_{3}$-BiMeO$_{3}$

中图分类号:  (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)

  • 77.84.-s
73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures) 77.84.Cg (PZT ceramics and other titanates) 77.84.Cg (PZT ceramics and other titanates)