中国物理B ›› 2024, Vol. 33 ›› Issue (4): 48101-048101.doi: 10.1088/1674-1056/ad23d7
Stable photocurrent—voltage characteristics of perovskite single crystal detectors obtained by pulsed bias
Xin Liu(刘新)1,2,3,†, Zhi-Long Chen(陈之龙)1,3,4,†, Hu Wang(王虎)1,2,3,‡, Wen-Qing Zhang(张雯清)1,2,3, Hao Dong(董昊)1,3,5, Peng-Xiang Wang(王鹏祥)1,2,3, and Yu-Chuan Shao(邵宇川)1,2,3,6,§
- 1 Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
4 Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China;
5 School of Microelectronics, Shanghai University, Shanghai 201899, China;
6 Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
Stable photocurrent—voltage characteristics of perovskite single crystal detectors obtained by pulsed bias
Xin Liu(刘新)1,2,3,†, Zhi-Long Chen(陈之龙)1,3,4,†, Hu Wang(王虎)1,2,3,‡, Wen-Qing Zhang(张雯清)1,2,3, Hao Dong(董昊)1,3,5, Peng-Xiang Wang(王鹏祥)1,2,3, and Yu-Chuan Shao(邵宇川)1,2,3,6,§
- 1 Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
4 Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China;
5 School of Microelectronics, Shanghai University, Shanghai 201899, China;
6 Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
摘要： Photocurrent—voltage characterization is a crucial method for assessing key parameters in x-ray or γ -ray semiconductor detectors, especially the carrier mobility lifetime product. However, the high biases during photocurrent measurements tend to cause severe ion migration, which can lead to the instability and inaccuracy of the test results. Given the mixed electronic—ionic characteristics, it is imperative to devise novel methods capable of precisely measuring photocurrent—voltage characteristics under high bias conditions, free from interference caused by ion migration. In this paper, pulsed bias is employed to explore the photocurrent—voltage characteristics of MAPbBr3 single crystals. The method yields stable photocurrent—voltage characteristics at a pulsed bias of up to 30 V, proving to be effective in mitigating ion migration. Through fitting the modified Hecht equation, we determined the mobility lifetime products of 1.0×10-2 cm2· V-1 for hole and 2.78×10-3 cm2· V-1 for electron. This approach offers a promising solution for accurately measuring the transport properties of carriers in perovskite.
中图分类号: (Methods of materials testing and analysis)
- 81.70.-q