Ga intercalation in van der Waals layers for advancing p-type Bi2Te3-based thermoelectrics

doi:10.1088/1674-1056/acc2af

中国物理B ›› 2023, Vol. 32 ›› Issue (6): 67201-067201.doi: 10.1088/1674-1056/acc2af

Ga intercalation in van der Waals layers for advancing p-type Bi₂Te₃-based thermoelectrics

Yiyuan Chen(陈艺源)^1,†, Qing Shi(石青)^1,†, Yan Zhong(钟艳)¹, Ruiheng Li(李瑞恒)¹, Liwei Lin(林黎蔚)¹, Ding Ren(任丁)^1,‡, Bo Liu(刘波)¹, and Ran Ang(昂然)^1,2,§

1 Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China;
2 Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China

收稿日期:2022-12-03 修回日期:2023-02-12 接受日期:2023-03-09 出版日期:2023-05-17 发布日期:2023-06-05
通讯作者: Ding Ren, Ran Ang E-mail:rending2k@scu.edu.cn;rang@scu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFB3803900 and 2018YFA0702100), the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences’ Large-Scale Scientific Facility (Grant No. U1932106), and the Sichuan University Innovation Research Program of China (Grant No. 2020SCUNL112).

Ga intercalation in van der Waals layers for advancing p-type Bi₂Te₃-based thermoelectrics

Yiyuan Chen(陈艺源)^1,†, Qing Shi(石青)^1,†, Yan Zhong(钟艳)¹, Ruiheng Li(李瑞恒)¹, Liwei Lin(林黎蔚)¹, Ding Ren(任丁)^1,‡, Bo Liu(刘波)¹, and Ran Ang(昂然)^1,2,§

1 Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China;
2 Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China

Received:2022-12-03 Revised:2023-02-12 Accepted:2023-03-09 Online:2023-05-17 Published:2023-06-05
Contact: Ding Ren, Ran Ang E-mail:rending2k@scu.edu.cn;rang@scu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFB3803900 and 2018YFA0702100), the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences’ Large-Scale Scientific Facility (Grant No. U1932106), and the Sichuan University Innovation Research Program of China (Grant No. 2020SCUNL112).

1. 2023-067201-SI.pdf(866KB)

摘要/Abstract

摘要： Tetradymite-structured chalcogenides, such as Bi$_{2}$Te$_{3}$ and Sb$_{2}$Te$_{3}$, are quasi-two-dimensional (2D) layered compounds, which are significant thermoelectric materials applied near room temperature. The intercalation of guest species in van der Waals (vdW) gap implemented for tunning properties has attracted much attention in recent years. We attempt to insert Ga atoms in the vdW gap between the Te layers in p-type Bi$_{0.3}$Sb$_{1.7}$Te$_{3}$ (BST) for further improving thermoelectrics. The vdW-related defects (including extrinsic interstitial and intrinsic defects) induced by Ga intercalation can not only modulate the carrier concentration but also enhance the texture, thereby yielding excellent electrical properties, which are reflected in the power factor ${PF} \sim 4.43 $ mW$\cdot$m$^{-1}\cdot$K$^{-2}$. Furthermore, the intercalation of Ga produces multi-scale lattice imperfections such as point defects, Te precipitations, and nanopores, realizing the low lattice thermal conductivity in BST-Ga samples. Ultimately, a peak ${zT} \sim 1.1$ at 373 K is achieved in the BST-1% Ga sample and greatly improved by $\sim 22%$ compared to the pristine BST. The weak bonding of vdW interlayer interaction can boost the synergistic effect for advancing BST-based or other layered thermoelectrics.

关键词: thermoelectricity, p-type (Bi,Sb)₂Te₃, van der Waals gap defects, texture alignment

Abstract: Tetradymite-structured chalcogenides, such as Bi$_{2}$Te$_{3}$ and Sb$_{2}$Te$_{3}$, are quasi-two-dimensional (2D) layered compounds, which are significant thermoelectric materials applied near room temperature. The intercalation of guest species in van der Waals (vdW) gap implemented for tunning properties has attracted much attention in recent years. We attempt to insert Ga atoms in the vdW gap between the Te layers in p-type Bi$_{0.3}$Sb$_{1.7}$Te$_{3}$ (BST) for further improving thermoelectrics. The vdW-related defects (including extrinsic interstitial and intrinsic defects) induced by Ga intercalation can not only modulate the carrier concentration but also enhance the texture, thereby yielding excellent electrical properties, which are reflected in the power factor ${PF} \sim 4.43 $ mW$\cdot$m$^{-1}\cdot$K$^{-2}$. Furthermore, the intercalation of Ga produces multi-scale lattice imperfections such as point defects, Te precipitations, and nanopores, realizing the low lattice thermal conductivity in BST-Ga samples. Ultimately, a peak ${zT} \sim 1.1$ at 373 K is achieved in the BST-1% Ga sample and greatly improved by $\sim 22%$ compared to the pristine BST. The weak bonding of vdW interlayer interaction can boost the synergistic effect for advancing BST-based or other layered thermoelectrics.

Key words: thermoelectricity, p-type (Bi,Sb)₂Te₃, van der Waals gap defects, texture alignment

中图分类号: (Thermoelectric and thermomagnetic effects)

72.15.Jf

73.50.Lw (Thermoelectric effects) 74.25.fc (Electric and thermal conductivity) 74.25.fg (Thermoelectric effects)

Yiyuan Chen(陈艺源), Qing Shi(石青), Yan Zhong(钟艳), Ruiheng Li(李瑞恒), Liwei Lin(林黎蔚), Ding Ren(任丁), Bo Liu(刘波), and Ran Ang(昂然). Ga intercalation in van der Waals layers for advancing p-type Bi₂Te₃-based thermoelectrics[J]. 中国物理B, 2023, 32(6): 67201-067201.

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Ga intercalation in van der Waals layers for advancing p-type Bi₂Te₃-based thermoelectrics

Ga intercalation in van der Waals layers for advancing p-type Bi₂Te₃-based thermoelectrics

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