High-pressure and high-temperature sintering of pure cubic silicon carbide: A study on stress-strain and densification

doi:10.1088/1674-1056/aca6d4

中国物理B ›› 2023, Vol. 32 ›› Issue (9): 98101-098101.doi: 10.1088/1674-1056/aca6d4

High-pressure and high-temperature sintering of pure cubic silicon carbide: A study on stress-strain and densification

Jin-Xin Liu(刘金鑫), Fang Peng(彭放)^†, Guo-Long Ma(马国龙), Wen-Jia Liang(梁文嘉), Rui-Qi He(何瑞琦), Shi-Xue Guan(管诗雪), Yue Tang(唐越), and Xiao-Jun Xiang(向晓君)

Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China

收稿日期:2022-08-19 修回日期:2022-11-07 接受日期:2022-11-29 发布日期:2023-08-23
通讯作者: Fang Peng E-mail:pengfang@scu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 12074273). High-pressure synchrotron radiation XRD experiments were carried out at the 4W2 beamline of the Beijing Synchrotron Radiation Facility (BSRF).

High-pressure and high-temperature sintering of pure cubic silicon carbide: A study on stress-strain and densification

Jin-Xin Liu(刘金鑫), Fang Peng(彭放)^†, Guo-Long Ma(马国龙), Wen-Jia Liang(梁文嘉), Rui-Qi He(何瑞琦), Shi-Xue Guan(管诗雪), Yue Tang(唐越), and Xiao-Jun Xiang(向晓君)

Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China

Received:2022-08-19 Revised:2022-11-07 Accepted:2022-11-29 Published:2023-08-23
Contact: Fang Peng E-mail:pengfang@scu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 12074273). High-pressure synchrotron radiation XRD experiments were carried out at the 4W2 beamline of the Beijing Synchrotron Radiation Facility (BSRF).

摘要/Abstract

摘要： Silicon carbide (SiC) is a high-performance structural ceramic material with excellent comprehensive properties, and is unmatched by metals and other structural materials. In this paper, raw SiC powder with an average grain size of 5 upmu m was sintered by an isothermal-compression process at 5.0 GPa and 1500 ℃; the maximum hardness of the sintered samples was 31.3 GPa. Subsequently, scanning electron microscopy was used to observe the microscopic morphology of the recovered SiC samples treated in a temperature and extended pressure range of 0-1500 ℃ and 0-16.0 GPa, respectively. Defects and plastic deformation in the SiC grains were further analyzed by transmission electron microscopy. Further, high-pressure in situ synchrotron radiation x-ray diffraction was used to study the intergranular stress distribution and yield strength under non-hydrostatic compression. This study provides a new viewpoint for the sintering of pure phase micron-sized SiC particles.

关键词: high pressure and high temperature, silicon carbide, stress analysis, defect

Abstract: Silicon carbide (SiC) is a high-performance structural ceramic material with excellent comprehensive properties, and is unmatched by metals and other structural materials. In this paper, raw SiC powder with an average grain size of 5 upmu m was sintered by an isothermal-compression process at 5.0 GPa and 1500 ℃; the maximum hardness of the sintered samples was 31.3 GPa. Subsequently, scanning electron microscopy was used to observe the microscopic morphology of the recovered SiC samples treated in a temperature and extended pressure range of 0-1500 ℃ and 0-16.0 GPa, respectively. Defects and plastic deformation in the SiC grains were further analyzed by transmission electron microscopy. Further, high-pressure in situ synchrotron radiation x-ray diffraction was used to study the intergranular stress distribution and yield strength under non-hydrostatic compression. This study provides a new viewpoint for the sintering of pure phase micron-sized SiC particles.

Key words: high pressure and high temperature, silicon carbide, stress analysis, defect

中图分类号: (Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation)

81.20.Ev

61.72.Ff (Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)) 81.05.Je (Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))

Jin-Xin Liu(刘金鑫), Fang Peng(彭放), Guo-Long Ma(马国龙), Wen-Jia Liang(梁文嘉), Rui-Qi He(何瑞琦), Shi-Xue Guan(管诗雪), Yue Tang(唐越), and Xiao-Jun Xiang(向晓君). High-pressure and high-temperature sintering of pure cubic silicon carbide: A study on stress-strain and densification[J]. 中国物理B, 2023, 32(9): 98101-098101.

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High-pressure and high-temperature sintering of pure cubic silicon carbide: A study on stress-strain and densification

High-pressure and high-temperature sintering of pure cubic silicon carbide: A study on stress-strain and densification

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