Higher-order topological Anderson insulator on the Sierpiński lattice

doi:10.1088/1674-1056/ad09d4

中国物理B ›› 2024, Vol. 33 ›› Issue (1): 17202-17202.doi: 10.1088/1674-1056/ad09d4

Higher-order topological Anderson insulator on the Sierpiński lattice

Huan Chen(陈焕)¹, Zheng-Rong Liu(刘峥嵘)¹, Rui Chen(陈锐)^1,†, and Bin Zhou(周斌)^1,2,‡

1 Department of Physics, Hubei University, Wuhan 430062, China;
2 Key Laboratory of Intelligent Sensing System and Security of Ministry of Education, Hubei University, Wuhan 430062, China

收稿日期:2023-10-08 修回日期:2023-11-06 接受日期:2023-11-06 出版日期:2023-12-13 发布日期:2023-12-13
通讯作者: Rui Chen, Bin Zhou E-mail:chenr@hubu.edu.cn;binzhou@hubu.edu.cn
基金资助:
R.C. acknowledges the support of the National Natural Science Foundation of China (Grant No. 12304195) and the Chutian Scholars Program in Hubei Province. B.Z. was supported by the National Natural Science Foundation of China (Grant No. 12074107), the program of outstanding young and middle-aged scientific and technological innovation team of colleges and universities in Hubei Province (Grant No. T2020001), and the innovation group project of the Natural Science Foundation of Hubei Province of China (Grant No. 2022CFA012). Z.-R.L. was supported by the Postdoctoral Innovation Research Program in Hubei Province (Grant No. 351342).

Higher-order topological Anderson insulator on the Sierpiński lattice

Huan Chen(陈焕)¹, Zheng-Rong Liu(刘峥嵘)¹, Rui Chen(陈锐)^1,†, and Bin Zhou(周斌)^1,2,‡

1 Department of Physics, Hubei University, Wuhan 430062, China;
2 Key Laboratory of Intelligent Sensing System and Security of Ministry of Education, Hubei University, Wuhan 430062, China

Received:2023-10-08 Revised:2023-11-06 Accepted:2023-11-06 Online:2023-12-13 Published:2023-12-13
Contact: Rui Chen, Bin Zhou E-mail:chenr@hubu.edu.cn;binzhou@hubu.edu.cn
Supported by:
R.C. acknowledges the support of the National Natural Science Foundation of China (Grant No. 12304195) and the Chutian Scholars Program in Hubei Province. B.Z. was supported by the National Natural Science Foundation of China (Grant No. 12074107), the program of outstanding young and middle-aged scientific and technological innovation team of colleges and universities in Hubei Province (Grant No. T2020001), and the innovation group project of the Natural Science Foundation of Hubei Province of China (Grant No. 2022CFA012). Z.-R.L. was supported by the Postdoctoral Innovation Research Program in Hubei Province (Grant No. 351342).

摘要/Abstract

摘要： Disorder effects on topological materials in integer dimensions have been extensively explored in recent years. However, its influence on topological systems in fractional dimensions remains unclear. Here, we investigate the disorder effects on a fractal system constructed on the Sierpiński lattice in fractional dimensions. The system supports the second-order topological insulator phase characterized by a quantized quadrupole moment and the normal insulator phase. We find that the second-order topological insulator phase on the Sierpiński lattice is robust against weak disorder but suppressed by strong disorder. Most interestingly, we find that disorder can transform the normal insulator phase to the second-order topological insulator phase with an emergent quantized quadrupole moment. Finally, the disorder-induced phase is further confirmed by calculating the energy spectrum and the corresponding probability distributions.

关键词: fractal system, topological insulator

Abstract: Disorder effects on topological materials in integer dimensions have been extensively explored in recent years. However, its influence on topological systems in fractional dimensions remains unclear. Here, we investigate the disorder effects on a fractal system constructed on the Sierpiński lattice in fractional dimensions. The system supports the second-order topological insulator phase characterized by a quantized quadrupole moment and the normal insulator phase. We find that the second-order topological insulator phase on the Sierpiński lattice is robust against weak disorder but suppressed by strong disorder. Most interestingly, we find that disorder can transform the normal insulator phase to the second-order topological insulator phase with an emergent quantized quadrupole moment. Finally, the disorder-induced phase is further confirmed by calculating the energy spectrum and the corresponding probability distributions.

Key words: fractal system, topological insulator

中图分类号: (Localization effects (Anderson or weak localization))

72.15.Rn

03.65.Vf (Phases: geometric; dynamic or topological)

Huan Chen(陈焕), Zheng-Rong Liu(刘峥嵘), Rui Chen(陈锐), and Bin Zhou(周斌). Higher-order topological Anderson insulator on the Sierpiński lattice[J]. 中国物理B, 2024, 33(1): 17202-17202.

Huan Chen(陈焕), Zheng-Rong Liu(刘峥嵘), Rui Chen(陈锐), and Bin Zhou(周斌). Higher-order topological Anderson insulator on the Sierpiński lattice[J]. Chin. Phys. B, 2024, 33(1): 17202-17202.

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Higher-order topological Anderson insulator on the Sierpiński lattice

Higher-order topological Anderson insulator on the Sierpiński lattice

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