Effects of phosphorus doping on the physical properties of axion insulator candidate EuIn2As2

doi:10.1088/1674-1056/ac5d2c

中国物理B ›› 2022, Vol. 31 ›› Issue (5): 57502-057502.doi: 10.1088/1674-1056/ac5d2c

Effects of phosphorus doping on the physical properties of axion insulator candidate EuIn₂As₂

Feihao Pan(潘斐豪), Congkuan Tian(田丛宽), Jiale Huang(黄嘉乐), Daye Xu(徐大业), Jinchen Wang (汪晋辰), Peng Cheng(程鹏)^†, Juanjuan Liu(刘娟娟)^‡, and Hongxia Zhang(张红霞)^§

Laboratory for Neutron Scattering and Beijing Key Laboratory of Optoelectronic Functional Materials and MicroNano Devices, Department of Physics, Renmin University of China, Beijing 100872, China

收稿日期:2022-01-24 修回日期:2022-02-25 出版日期:2022-05-14 发布日期:2022-04-29
通讯作者: Peng Cheng,E-mail:pcheng@ruc.edu.cn;Juanjuan Liu,E-mail:juanjuanliu@ruc.edu.cn;Hongxia Zhang,E-mail:hxzhang@ruc.edu.cn E-mail:pcheng@ruc.edu.cn;juanjuanliu@ruc.edu.cn;hxzhang@ruc.edu.cn
基金资助:
This work was supported by the National Natural Science Foundation of China (Grant Nos.12074426,11227906 and U2030106),the Fundamental Research Funds for the Central Universities,the Research Funds of Renmin University of China (Grant No.20XNLG19).

Effects of phosphorus doping on the physical properties of axion insulator candidate EuIn₂As₂

Laboratory for Neutron Scattering and Beijing Key Laboratory of Optoelectronic Functional Materials and MicroNano Devices, Department of Physics, Renmin University of China, Beijing 100872, China

Received:2022-01-24 Revised:2022-02-25 Online:2022-05-14 Published:2022-04-29
Contact: Peng Cheng,E-mail:pcheng@ruc.edu.cn;Juanjuan Liu,E-mail:juanjuanliu@ruc.edu.cn;Hongxia Zhang,E-mail:hxzhang@ruc.edu.cn E-mail:pcheng@ruc.edu.cn;juanjuanliu@ruc.edu.cn;hxzhang@ruc.edu.cn
About author:2022-3-14
Supported by:
This work was supported by the National Natural Science Foundation of China (Grant Nos.12074426,11227906 and U2030106),the Fundamental Research Funds for the Central Universities,the Research Funds of Renmin University of China (Grant No.20XNLG19).

1. 图4.png(13KB)

摘要/Abstract

摘要： We report an investigation on the single crystal growth, magnetic and transport properties of EuIn₂(As_1-xP_x)₂ (0≤x≤ 1). The physical properties of axion insulator candidate EuIn₂As₂ can be effectively tuned by P-doping. With increasing x, the c-axis lattice parameter decreases linearly, the magnetic transition temperature gradually increases and ferromagnetic interactions are enhanced. This is similar to the previously reported high pressure effect on EuIn₂As₂. For x=0.40, a spin glass state at T_g=10 K emerges together with the observations of a butter-fly shaped magnetic hysteresis and slow magnetic behavior. Besides, magnetic transition has great influence on the charge carriers in this system and negative colossal magnetoresistance is observed for all P-doped samples. Our findings suggest that EuIn₂(As_1-xP_x)₂ is a promising material playground for exploring novel topological states.

Abstract: We report an investigation on the single crystal growth, magnetic and transport properties of EuIn₂(As_1-xP_x)₂ (0≤x≤ 1). The physical properties of axion insulator candidate EuIn₂As₂ can be effectively tuned by P-doping. With increasing x, the c-axis lattice parameter decreases linearly, the magnetic transition temperature gradually increases and ferromagnetic interactions are enhanced. This is similar to the previously reported high pressure effect on EuIn₂As₂. For x=0.40, a spin glass state at T_g=10 K emerges together with the observations of a butter-fly shaped magnetic hysteresis and slow magnetic behavior. Besides, magnetic transition has great influence on the charge carriers in this system and negative colossal magnetoresistance is observed for all P-doped samples. Our findings suggest that EuIn₂(As_1-xP_x)₂ is a promising material playground for exploring novel topological states.

中图分类号: (Spin glasses and other random magnets)

75.50.Lk

72.25.Rb (Spin relaxation and scattering) 03.65.Vf (Phases: geometric; dynamic or topological)

Feihao Pan(潘斐豪), Congkuan Tian(田丛宽), Jiale Huang(黄嘉乐), Daye Xu(徐大业), Jinchen Wang (汪晋辰), Peng Cheng(程鹏), Juanjuan Liu(刘娟娟), and Hongxia Zhang(张红霞). Effects of phosphorus doping on the physical properties of axion insulator candidate EuIn₂As₂[J]. 中国物理B, 2022, 31(5): 57502-057502.

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Effects of phosphorus doping on the physical properties of axion insulator candidate EuIn₂As₂

Effects of phosphorus doping on the physical properties of axion insulator candidate EuIn₂As₂

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