Progress on 2D topological insulators and potential applications in electronic devices

doi:10.1088/1674-1056/aba9c5

中国物理B ›› 2020, Vol. 29 ›› Issue (9): 97304-097304.doi: 10.1088/1674-1056/aba9c5

所属专题： SPECIAL TOPIC — Topological 2D materials

Progress on 2D topological insulators and potential applications in electronic devices

Yanhui Hou(侯延辉), Teng Zhang(张腾), Jiatao Sun(孙家涛), Liwei Liu(刘立巍), Yugui Yao(姚裕贵), Yeliang Wang(王业亮)

MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China

收稿日期:2020-05-22 修回日期:2020-07-14 接受日期:2020-07-28 出版日期:2020-09-05 发布日期:2020-09-05
通讯作者: Liwei Liu E-mail:liwei.liu@bit.edu.cn
基金资助:
Project supported by the Beijing Natural Science Foundation, China (Grant Nos. Z190006 and 4192054), the National Natural Science Foundation of China (Grant Nos. 61971035, 61901038, and 61725107), Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB30000000), and Beijing Institute of Technology Research Fund Program for Young Scholars (Grant No. 3050011181814).

Progress on 2D topological insulators and potential applications in electronic devices

Yanhui Hou(侯延辉), Teng Zhang(张腾), Jiatao Sun(孙家涛), Liwei Liu(刘立巍), Yugui Yao(姚裕贵), Yeliang Wang(王业亮)

MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China

Received:2020-05-22 Revised:2020-07-14 Accepted:2020-07-28 Online:2020-09-05 Published:2020-09-05
Contact: Liwei Liu E-mail:liwei.liu@bit.edu.cn
Supported by:
Project supported by the Beijing Natural Science Foundation, China (Grant Nos. Z190006 and 4192054), the National Natural Science Foundation of China (Grant Nos. 61971035, 61901038, and 61725107), Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB30000000), and Beijing Institute of Technology Research Fund Program for Young Scholars (Grant No. 3050011181814).

摘要/Abstract

摘要： Two-dimensional topological insulators (2DTIs) have attracted increasing attention during the past few years. New 2DTIs with increasing larger spin-orbit coupling (SOC) gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally. In this review, the 2DTIs, ranging from single element graphene-like materials to bi-elemental transition metal chalcogenides (TMDs) and to multi-elemental materials, with different thicknesses, structures, and phases, have been summarized and discussed. The topological properties (especially the quantum spin Hall effect and Dirac fermion feature) and potential applications have been summarized. This review also points out the challenge and opportunities for future 2DTI study, especially on the device applications based on the topological properties.

关键词: two-dimensional materials, topological insulators, quantum spin Hall effect, dissipation-less devices, nanoelectronics

Abstract: Two-dimensional topological insulators (2DTIs) have attracted increasing attention during the past few years. New 2DTIs with increasing larger spin-orbit coupling (SOC) gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally. In this review, the 2DTIs, ranging from single element graphene-like materials to bi-elemental transition metal chalcogenides (TMDs) and to multi-elemental materials, with different thicknesses, structures, and phases, have been summarized and discussed. The topological properties (especially the quantum spin Hall effect and Dirac fermion feature) and potential applications have been summarized. This review also points out the challenge and opportunities for future 2DTI study, especially on the device applications based on the topological properties.

Key words: two-dimensional materials, topological insulators, quantum spin Hall effect, dissipation-less devices, nanoelectronics

中图分类号: (Electronic transport in nanoscale materials and structures)

73.63.-b

73.43.Nq (Quantum phase transitions) 03.65.Vf (Phases: geometric; dynamic or topological) 85.35.-p (Nanoelectronic devices)

侯延辉, 张腾, 孙家涛, 刘立巍, 姚裕贵, 王业亮. Progress on 2D topological insulators and potential applications in electronic devices[J]. 中国物理B, 2020, 29(9): 97304-097304.

Yanhui Hou(侯延辉), Teng Zhang(张腾), Jiatao Sun(孙家涛), Liwei Liu(刘立巍), Yugui Yao(姚裕贵), Yeliang Wang(王业亮). Progress on 2D topological insulators and potential applications in electronic devices[J]. Chin. Phys. B, 2020, 29(9): 97304-097304.

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Progress on 2D topological insulators and potential applications in electronic devices

Progress on 2D topological insulators and potential applications in electronic devices

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