W-doped In2O3 nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

doi:10.1088/1674-1056/acdeda

中国物理B ›› 2023, Vol. 32 ›› Issue (11): 118101-118101.doi: 10.1088/1674-1056/acdeda

W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

Yang Yang(杨洋)^1,†, Chuanyu Fu(傅传玉)^1,†, Shuo Ke(柯硕)¹, Hangyuan Cui(崔航源)¹, Xiao Fang(方晓)¹, Changjin Wan(万昌锦)^1,‡, and Qing Wan(万青)^1,2,§

1 School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China;
2 School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China

收稿日期:2023-04-27 修回日期:2023-06-02 接受日期:2023-06-16 出版日期:2023-10-16 发布日期:2023-10-24
通讯作者: Changjin Wan, Qing Wan E-mail:cjwan@nju.edu.cn;wanqing@nju.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1200051 and 2019YFB2205400) and the National Natural Science Foundation of China (Grant Nos. 62174082 and 62074075).

W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

Yang Yang(杨洋)^1,†, Chuanyu Fu(傅传玉)^1,†, Shuo Ke(柯硕)¹, Hangyuan Cui(崔航源)¹, Xiao Fang(方晓)¹, Changjin Wan(万昌锦)^1,‡, and Qing Wan(万青)^1,2,§

1 School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China;
2 School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China

Received:2023-04-27 Revised:2023-06-02 Accepted:2023-06-16 Online:2023-10-16 Published:2023-10-24
Contact: Changjin Wan, Qing Wan E-mail:cjwan@nju.edu.cn;wanqing@nju.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1200051 and 2019YFB2205400) and the National Natural Science Foundation of China (Grant Nos. 62174082 and 62074075).

摘要/Abstract

摘要： Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper, neuromorphic transistors with W-doped In₂O₃ nanofibers as the channel layers are fabricated and optoelectronic synergistic synaptic plasticity is also investigated. Such nanofiber transistors can be used to emulate some biological synaptic functions, including excitatory postsynaptic current (EPSC), long-term potentiation (LTP), and depression (LTD). Moreover, the synaptic plasticity of the nanofiber transistor can be synergistically modulated by light pulse and electrical pulse. At last, pulsed light learning and pulsed electrical forgetting behaviors were emulated in 5× 5 nanofiber device array. Our results provide new insights into the development of nanofiber optoelectronic neuromorphic devices with synergistic synaptic plasticity.

关键词: W-doped In₂O₃ nanofibers, neuromorphic transistors, optoelectronic synaptic plasticity

Abstract: Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper, neuromorphic transistors with W-doped In₂O₃ nanofibers as the channel layers are fabricated and optoelectronic synergistic synaptic plasticity is also investigated. Such nanofiber transistors can be used to emulate some biological synaptic functions, including excitatory postsynaptic current (EPSC), long-term potentiation (LTP), and depression (LTD). Moreover, the synaptic plasticity of the nanofiber transistor can be synergistically modulated by light pulse and electrical pulse. At last, pulsed light learning and pulsed electrical forgetting behaviors were emulated in 5× 5 nanofiber device array. Our results provide new insights into the development of nanofiber optoelectronic neuromorphic devices with synergistic synaptic plasticity.

Key words: W-doped In₂O₃ nanofibers, neuromorphic transistors, optoelectronic synaptic plasticity

中图分类号: (Amorphous semiconductors)

81.05.Gc

85.30.Tv (Field effect devices) 87.19.lg (Synapses: chemical and electrical (gap junctions))

Yang Yang(杨洋), Chuanyu Fu(傅传玉), Shuo Ke(柯硕), Hangyuan Cui(崔航源), Xiao Fang(方晓), Changjin Wan(万昌锦), and Qing Wan(万青). W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity[J]. 中国物理B, 2023, 32(11): 118101-118101.

参考文献

[1] Packard M G and Knowlton B J 2002 Annu. Rev. Neurosci. 25 563
[2] Zhu Y, Liu G, Xin Z, Fu C, Wan Q and Shan F 2019 ACS Appl. Mater. Inter. 12 1061
[3] Hu W, Jiang J, Xie D, Wang S, Bi K, Duan H, Yang J and He J 2018 Nanoscale 10 14893
[4] Ilyas N, Wang J, Li C, Li D, Fu H, Gu D, Jiang X, Liu F, Jiang Y and Li W 2022 Adv. Funct. Mater. 32 2110976
[5] Han H, Xu Z, Guo K, Ni Y, Ma M, Yu H, Wei H, Gong J, Zhang S and Xu W 2020 Advanced Intelligent Systems 2 1900176
[6] Guo Y, Wu F, Dun G, Cui T, Liu Y, Tan X, Qiao Y, Lanza M, Tian H and Yang Y 2023 Adv. Funct. Mater. 33 2208055
[7] Zhu Y, Mao H, Zhu Y, Zhu L, Chen C, Wang X, Ke S, Fu C, Wan C and Wan Q 2022 IEEE Electron Dev. Lett. 43 651
[8] Zhu Y, Shin B, Liu G and Shan F 2019 IEEE Electron Dev. Lett. 40 1776
[9] Li H, Ding Y, Qiu H, Zhu Y, Han C, Liu G and Shan F 2022 IEEE Trans. Electron Dev. 69 5363
[10] Zhu Y, Peng B, Zhu L, Chen C, Wang X, Mao H, Zhu Y, Fu C, Ke S and Wan C 2022 Appl. Phys. Lett. 121 133502
[11] Lee S, Cho Y W, Lee J, Jung Y, Oh S, Sun J, Kim S and Joo Y 2021 Adv. Sci. 8 2001544
[12] Shao L, Zhao Y and Liu Y 2021 Adv. Funct. Mater. 31 2101951
[13] Guo Y, Qiao Y, Cui T, Wu F, Ji S, Yang Y, Tian H and Ren T 2022 Appl. Sci. 12 4370
[14] Spencer J A, Mock A L, Jacobs A G, Schubert M, Zhang Y and Tadjer M J 2022 Appl. Phys. Rev. 9 011315
[15] Karim M R, Feng Z and Zhao H 2018 Cryst. Growth. Des. 18 4495
[16] Liang C H, Meng G W, Lei Y, Phillipp F and Zhang L D 2001 Adv. Mater. 13 1330
[17] Crockett B M, Jansons A W, Koskela K M, Sharps M C, Johnson D W and Hutchison J E 2019 Chem. Mater. 31 3370
[18] Parthiban S, Elangovan E, Ramamurthi K, Martins R and Fortunato E 2010 Solar Energy Materials and Solar Cells 94 406
[19] Zhu X, Li Y, Zhang H, Song L, Zu H, Qin Y, Liu L, Li Y and Wang F 2020 J. Alloys Compd. 830 154578
[20] Luo J, Gao Y, Wang X Y, Liu Z H and Wan Q 2019 J. Phys. D. Appl. Phys. 52 174001
[21] Aikawa S, Nabatame T and Tsukagoshi K 2013 Appl. Phys. Lett. 103 172105
[22] Liu Y, Zhu S, Wei R, Hu L, Tang X, Yang J, Song W, Dai J, Zhu X and Sun Y 2020 Ceram. Int. 46 2173
[23] Mitoma N, Aikawa S, Ou-Yang W, Gao X, Kizu T, Lin M F, Fujiwara A, Nabatame T and Tsukagoshi K 2015 Appl. Phys. Lett. 106 042106
[24] Kizu T, Aikawa S, Mitoma N, Shimizu M, Gao X, Lin M F, Nabatame T and Tsukagoshi K 2014 Appl. Phys. Lett. 104 152103
[25] Gupta R K, Ghosh K, Mishra S R and Kahol P K 2008 Appl. Surf. Sci. 254 1661
[26] Liu Y, Zhu S, Wei R, Hu L, Tang X, Yang J, Song W, Dai J, Zhu X and Sun Y 2020 Ceram. Int. 46 2173
[27] Lee J H and Kim H K 2019 Mater. Sci Semicond. Process. 89 176
[28] Wu W F, Chiou B S and Hsieh S T 1994 Semicond. Sci Tech. 9 6
[29] Siokou A, Leftheriotis G, Papaefthimiou S and Yianoulis P 2001 Surf. Sci. 482 294
[30] Yang Y, Cui H, Ke S, Pei M, Shi K, Wan C and Wan Q 2023 Appl. Phys. Lett. 122 043508
[31] Zhu L, He Y, Chen C, Zhu Y, Shi Y and Wan Q 2021 IEEE Trans. Electron. Dev. 68 1659
[32] Zhu L Q, Wan C J, Guo L Q, Shi Y and Wan Q 2014 Nat. Commun. 5 3158
[33] Kim M and Lee J 2020 Adv. Mater. 32 1907826

W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 1

Metrics

本文评价

推荐阅读 0