中国物理B ›› 2014, Vol. 23 ›› Issue (6): 67103-067103.doi: 10.1088/1674-1056/23/6/067103

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition

李亮, 杨林安, 薛军帅, 曹荣涛, 许晟瑞, 张进成, 郝跃   

  1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2013-09-11 修回日期:2013-11-03 出版日期:2014-06-15 发布日期:2014-06-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076079, 61274092, and 61204006) and the Key Program of the National Natural Science Foundation of China (Grant No. 61334002).

Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition

Li Liang (李亮), Yang Lin-An (杨林安), Xue Jun-Shuai (薛军帅), Cao Rong-Tao (曹荣涛), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)   

  1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2013-09-11 Revised:2013-11-03 Online:2014-06-15 Published:2014-06-15
  • Contact: Yang Lin-An E-mail:layang@xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076079, 61274092, and 61204006) and the Key Program of the National Natural Science Foundation of China (Grant No. 61334002).

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摘要： We report on an improvement in the crystal quality of GaN film with an In0.17Al0.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations (TDs) in GaN film with the InAlN interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy (TEM) measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InAlN interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InAlN interlayer. Atomic force microscopy measurement shows that the InAlN interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InAlN interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.

关键词: In0.17Al0.83N interlayer, GaN crystal quality, dislocation reduction, photoluminescence, Raman spectra

Abstract: We report on an improvement in the crystal quality of GaN film with an In0.17Al0.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations (TDs) in GaN film with the InAlN interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy (TEM) measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InAlN interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InAlN interlayer. Atomic force microscopy measurement shows that the InAlN interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InAlN interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.

Key words: In0.17Al0.83N interlayer, GaN crystal quality, dislocation reduction, photoluminescence, Raman spectra

中图分类号:  (III-V semiconductors)

  • 71.55.Eq
78.55.Cr (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)