Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO2 dielectric

doi:10.1088/1674-1056/22/11/117701

中国物理B ›› 2013, Vol. 22 ›› Issue (11): 117701-117701.doi: 10.1088/1674-1056/22/11/117701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO₂ dielectric

韩锴^{a b}, 王晓磊^b, 杨红^b, 王文武^b

a Department of Physics and Electronic Science, Weifang University, Weifang 261061, China;
b Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2013-03-29 修回日期:2013-05-31 出版日期:2013-09-28 发布日期:2013-09-28
基金资助:
Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZX02035) and the National Natural Science of China (Grant Nos. 61176091 and 50932001).

Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO₂ dielectric

Han Kai (韩锴)^{a b}, Wang Xiao-Lei (王晓磊)^b, Yang Hong (杨红)^b, Wang Wen-Wu (王文武)^b

a Department of Physics and Electronic Science, Weifang University, Weifang 261061, China;
b Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2013-03-29 Revised:2013-05-31 Online:2013-09-28 Published:2013-09-28
Contact: Han Kai E-mail:hankai@ime.ac.cn
Supported by:
Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZX02035) and the National Natural Science of China (Grant Nos. 61176091 and 50932001).

摘要/Abstract

摘要： Gd-doped HfO₂ has drawn worldwide interest for its interesting features. It is considered to be a suitable material for N-type metal-oxide-semiconductor (MOS) devices due to a negative flatband voltage (V_fb) shift caused by the Gd doping. In this work, an anomalous positive shift was observed when Gd was doped into HfO₂. The cause for such a phenomenon was systematically investigated by distinguishing the effects of different factors, such as Fermi level pinning (FLP), a dipole at the dielectric/SiO₂ interface, fixed interfacial charge, and bulk charge, on V_fb. It was found that the FLP and interfacial dipole could make V_fb negatively shifted, which is in agreement with the conventional dipole theory. The increase in interfacial fixed charge resulting from Gd doping plays a major role in positive V_fb shift.

关键词: high-k dielectric, HfGdO_x, interface dipole, flatband voltage shift

Abstract: Gd-doped HfO₂ has drawn worldwide interest for its interesting features. It is considered to be a suitable material for N-type metal-oxide-semiconductor (MOS) devices due to a negative flatband voltage (V_fb) shift caused by the Gd doping. In this work, an anomalous positive shift was observed when Gd was doped into HfO₂. The cause for such a phenomenon was systematically investigated by distinguishing the effects of different factors, such as Fermi level pinning (FLP), a dipole at the dielectric/SiO₂ interface, fixed interfacial charge, and bulk charge, on V_fb. It was found that the FLP and interfacial dipole could make V_fb negatively shifted, which is in agreement with the conventional dipole theory. The increase in interfacial fixed charge resulting from Gd doping plays a major role in positive V_fb shift.

Key words: high-k dielectric, HfGdO_x, interface dipole, flatband voltage shift

中图分类号:

77.55.D-

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

韩锴, 王晓磊, 杨红, 王文武. Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO₂ dielectric[J]. 中国物理B, 2013, 22(11): 117701-117701.

Han Kai (韩锴), Wang Xiao-Lei (王晓磊), Yang Hong (杨红), Wang Wen-Wu (王文武). Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO₂ dielectric[J]. Chin. Phys. B, 2013, 22(11): 117701-117701.

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Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO₂ dielectric

Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO₂ dielectric

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