中国物理B ›› 2022, Vol. 31 ›› Issue (4): 47901-047901.doi: 10.1088/1674-1056/ac322c

• • 上一篇    下一篇

Effect of Cu doping on the secondary electron yield of carbon films on Ag-plated aluminum alloy

Tiancun Hu(胡天存)1,2, Shukai Zhu(朱淑凯)3, Yanan Zhao(赵亚楠)3,†, Xuan Sun(孙璇)3, Jing Yang(杨晶)2, Yun He(何鋆)2, Xinbo Wang(王新波)2, Chunjiang Bai(白春江)2, He Bai(白鹤)2, Huan Wei(魏焕)2, Meng Cao(曹猛)1, Zhongqiang Hu(胡忠强)3, Ming Liu(刘明)3, and Wanzhao Cui(崔万照)2,‡   

  1. 1 Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
    2 National Key laboratory of Science and Technology on Space Microwave, China Academy of Space Technology(Xi'an), Xi'an 710100, China;
    3 Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education&International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • 收稿日期:2021-09-08 修回日期:2021-10-12 接受日期:2021-10-22 出版日期:2022-03-16 发布日期:2022-03-16
  • 通讯作者: Yanan Zhao, Wanzhao Cui E-mail:zhaoyanan1984@xjtu.edu.cn;cuiwanzhao@126.com
  • 基金资助:
    This work was supported by the National Key Laboratory Foundation (Grant Nos. 2018SSFNKLSMT-04,614241101010117 and 6142411191110) and the National 111 Project of China (Grant No. B14040).

Effect of Cu doping on the secondary electron yield of carbon films on Ag-plated aluminum alloy

Tiancun Hu(胡天存)1,2, Shukai Zhu(朱淑凯)3, Yanan Zhao(赵亚楠)3,†, Xuan Sun(孙璇)3, Jing Yang(杨晶)2, Yun He(何鋆)2, Xinbo Wang(王新波)2, Chunjiang Bai(白春江)2, He Bai(白鹤)2, Huan Wei(魏焕)2, Meng Cao(曹猛)1, Zhongqiang Hu(胡忠强)3, Ming Liu(刘明)3, and Wanzhao Cui(崔万照)2,‡   

  1. 1 Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
    2 National Key laboratory of Science and Technology on Space Microwave, China Academy of Space Technology(Xi'an), Xi'an 710100, China;
    3 Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education&International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • Received:2021-09-08 Revised:2021-10-12 Accepted:2021-10-22 Online:2022-03-16 Published:2022-03-16
  • Contact: Yanan Zhao, Wanzhao Cui E-mail:zhaoyanan1984@xjtu.edu.cn;cuiwanzhao@126.com
  • Supported by:
    This work was supported by the National Key Laboratory Foundation (Grant Nos. 2018SSFNKLSMT-04,614241101010117 and 6142411191110) and the National 111 Project of China (Grant No. B14040).

RichHTML

0

PDF (PC)

253

赞

摘要： Reducing the secondary electron yield (SEY) of Ag-plated aluminum alloy is important for high-power microwave components. In this work, Cu doped carbon films are prepared and the secondary electron emission characteristics are studied systematically. The secondary electron coefficient δmax of carbon films increases with the Cu contents increasing at first, and then decreases to 1.53 at a high doping ratio of 0.645. From the viewpoint of surface structure, the higher the content of Cu is, the rougher the surface is, since more cluster particles appear on the surface due to the small solid solubility of Cu in the amorphous carbon network. However, from viewpoint of the electronic structure, the reduction of the sp2 hybrid bonds will increase the SEY effect as the content of Cu increases, due to the decreasing probability of collision with free electrons. Thus, the two mechanisms would compete and coexist to affect the SEY characteristics in Cu doped carbon films.

关键词: copper-doped carbon, secondary electron yield, microwave devices, surface roughness

Abstract: Reducing the secondary electron yield (SEY) of Ag-plated aluminum alloy is important for high-power microwave components. In this work, Cu doped carbon films are prepared and the secondary electron emission characteristics are studied systematically. The secondary electron coefficient δmax of carbon films increases with the Cu contents increasing at first, and then decreases to 1.53 at a high doping ratio of 0.645. From the viewpoint of surface structure, the higher the content of Cu is, the rougher the surface is, since more cluster particles appear on the surface due to the small solid solubility of Cu in the amorphous carbon network. However, from viewpoint of the electronic structure, the reduction of the sp2 hybrid bonds will increase the SEY effect as the content of Cu increases, due to the decreasing probability of collision with free electrons. Thus, the two mechanisms would compete and coexist to affect the SEY characteristics in Cu doped carbon films.

Key words: copper-doped carbon, secondary electron yield, microwave devices, surface roughness

中图分类号:  (Electron impact: secondary emission)

  • 79.20.Hx